Authors:
CUTOLO A
DALIENTO S
SANSEVERINO A
VITALE GF
ZENI L
Citation: A. Cutolo et al., AN OPTICAL TECHNIQUE TO MEASURE THE BULK LIFETIME AND THE SURFACE RECOMBINATION VELOCITY IN SILICON SAMPLES BASED ON A LASER-DIODE PROBE SYSTEM, Solid-state electronics, 42(6), 1998, pp. 1035-1038
Authors:
DALIENTO S
SANSEVERINO A
SPIRITO P
SARRO PM
ZENI L
Citation: S. Daliento et al., RECOMBINATION CENTERS IDENTIFICATION IN VERY THIN SILICON EPITAXIAL LAYERS VIA LIFETIME MEASUREMENTS, IEEE electron device letters, 17(3), 1996, pp. 148-150
Authors:
DALIENTO S
RINALDI N
SANSEVERINO A
SPIRITO P
Citation: S. Daliento et al., 2-DIMENSIONAL ANALYSIS OF A TEST STRUCTURE FOR LIFETIME PROFILE MEASUREMENTS, I.E.E.E. transactions on electron devices, 42(11), 1995, pp. 1924-1928
Citation: P. Spirito et A. Sanseverino, DETERMINATION OF ENERGY-LEVELS OF RECOMBINATION CENTERS IN LOW-DOPED SI LAYERS BY TEMPERATURE-DEPENDENCE OF RECOMBINATION LIFETIME, Solid-state electronics, 37(7), 1994, pp. 1429-1436