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Authors: DROUOT V GENDRY M SANTINELLI C LETARTE X TARDY J VIKTOROVITCH P HOLLINGER G AMBRI M PITAVAL M
Citation: V. Drouot et al., DESIGN AND GROWTH INVESTIGATIONS OF STRAINED INXGA1-XAS INALAS/INP HETEROSTRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATION/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1326-1335

Authors: DROUOT V GENDRY M SANTINELLI C VIKTOROVITCH P HOLLINGER G ELLEUCH S PELOUARD JL
Citation: V. Drouot et al., HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS/, Journal of applied physics, 77(4), 1995, pp. 1810-1812
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