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Results: 1-18 |
Results: 18
GROWTH OPTIMIZATION AND DOPING WITH SI AND BE OF HIGH-QUALITY GAN ON SI(111) BY MOLECULAR-BEAM EPITAXY
Authors: SANCHEZGARCIA MA CALLEJA E SANCHEZ FJ CALLE F MONROY E BASAK D MUNOZ E VILLAR C SANZHERVAS A AGUILAR M SERRANO JJ BLANCO JM
Citation: Ma. Sanchezgarcia et al., GROWTH OPTIMIZATION AND DOPING WITH SI AND BE OF HIGH-QUALITY GAN ON SI(111) BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 276-281
DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/
Authors: DICKEY SA MAJERFELD A SANCHEZROJAS JL SACEDON A MUNOZ E SANZHERVAS A AGUILAR M KIM BW
Citation: Sa. Dickey et al., DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/, Microelectronic engineering, 43-4, 1998, pp. 171-177
STRAIN COMPENSATION BY HEAVY BORON DOPING IN SI1-XGEX LAYERS GROWN BYSOLID-PHASE EPITAXY
Authors: RODRIGUEZ A RODRIGUEZ T SANZHERVAS A KLING A SOARES JC DASILVA MF BALLESTEROS C GWILLIAM RM
Citation: A. Rodriguez et al., STRAIN COMPENSATION BY HEAVY BORON DOPING IN SI1-XGEX LAYERS GROWN BYSOLID-PHASE EPITAXY, Journal of materials research, 12(7), 1997, pp. 1698-1705
HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM WELLS AND SUPERLATTICES ON (111)B GAAS/
Authors: SANZHERVAS A LOPEZ M SACEDON A SANCHEZROJAS JL AGUILAR M LLORENTE C LORENZO R ABRIL EJ CALLEJA E MUNOZ E
Citation: A. Sanzhervas et al., HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM WELLS AND SUPERLATTICES ON (111)B GAAS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 329-337
PHOTOREFLECTANCE STUDY OF [111]-GAAS ALGAAS QUANTUM-WELLS AT ROOM-TEMPERATURE/
Authors: WANG G TRONC P MELLITI R MAO E MAJERFELD A SANZHERVAS A DEPEYROT J KIM BW
Citation: G. Wang et al., PHOTOREFLECTANCE STUDY OF [111]-GAAS ALGAAS QUANTUM-WELLS AT ROOM-TEMPERATURE/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 117-121
HIGH-QUALITY GAAS ALGAAS QUANTUM-WELLS GOWN ON (111)A SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY/
Authors: MAO E DICKEY SA MAJERFELD A SANZHERVAS A KIM BW
Citation: E. Mao et al., HIGH-QUALITY GAAS ALGAAS QUANTUM-WELLS GOWN ON (111)A SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY/, Microelectronics, 28(8-10), 1997, pp. 727-734
CHARGE ACCUMULATION EFFECTS IN INGAAS GAAS [111]-ORIENTED PIEZOELECTRIC MULTIPLE-QUANTUM WELLS/
Authors: SANCHEZROJAS JL SACEDON A VALTUENA JF SANZHERVAS A IZPURA I CALLEJA E MUNOZ E ABRIL EJ AGUILAR M
Citation: Jl. Sanchezrojas et al., CHARGE ACCUMULATION EFFECTS IN INGAAS GAAS [111]-ORIENTED PIEZOELECTRIC MULTIPLE-QUANTUM WELLS/, Microelectronics, 28(8-10), 1997, pp. 767-775
APPLICATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY TO THE STRUCTURALSTUDY OF EPITAXIAL MULTILAYERS ON NOVEL INDEX SURFACES
Authors: SANZHERVAS A GARRIDO M AGUILAR M SACEDON A SANCHEZROJAS JL CALLEJA E MUNOZ E VILLAR C ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., APPLICATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY TO THE STRUCTURALSTUDY OF EPITAXIAL MULTILAYERS ON NOVEL INDEX SURFACES, Microelectronics, 28(8-10), 1997, pp. 777-784
GROWTH-KINETICS AND MORPHOLOGY OF HIGH-QUALITY ALN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: CALLEJA E SANCHEZGARCIA MA MONROY E SANCHEZ FJ MUNOZ E SANZHERVAS A VILLAR C AGUILAR M
Citation: E. Calleja et al., GROWTH-KINETICS AND MORPHOLOGY OF HIGH-QUALITY ALN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(9), 1997, pp. 4681-4683
OBSERVATION OF NON-TRIGONAL LATTICE DISTORTION IN PSEUDOMORPHIC INGAAS GAAS SUPERLATTICES GROWN ON MISORIENTED (111)B GAAS/
Authors: SANZHERVAS A AGUILAR M SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E VILLAR C ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., OBSERVATION OF NON-TRIGONAL LATTICE DISTORTION IN PSEUDOMORPHIC INGAAS GAAS SUPERLATTICES GROWN ON MISORIENTED (111)B GAAS/, Journal of applied physics, 82(7), 1997, pp. 3297-3305
GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES
Authors: UTZMEIER T ARMELLES G POSTIGO PA BRIONES F CASTRILLO P SANZHERVAS A AGUILAR M ABRIL EJ
Citation: T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES, Applied physics letters, 70(22), 1997, pp. 3017-3019
PHOTOINHIBITION OF THE QUANTUM-CONFINED STARK-EFFECT IN PIEZOELECTRICMULTIPLE-QUANTUM WELLS
Authors: SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E SANZHERVAS A DEBENITO G LOPEZ M
Citation: Jl. Sanchezrojas et al., PHOTOINHIBITION OF THE QUANTUM-CONFINED STARK-EFFECT IN PIEZOELECTRICMULTIPLE-QUANTUM WELLS, Physical review. B, Condensed matter, 53(23), 1996, pp. 15469-15472
PROBING RESONANT-TUNNELING AND CHARGE ACCUMULATION VIA CAPACITANCE MEASUREMENTS IN [111]-ORIENTED INGAAS GAAS MQW AND SUPERLATTICES/
Authors: SANCHEZROJAS JL SACEDON A SANZHERVAS A CALLEJA E MUNOZ E ABRIL EJ
Citation: Jl. Sanchezrojas et al., PROBING RESONANT-TUNNELING AND CHARGE ACCUMULATION VIA CAPACITANCE MEASUREMENTS IN [111]-ORIENTED INGAAS GAAS MQW AND SUPERLATTICES/, Solid-state electronics, 40(1-8), 1996, pp. 591-595
SIMULATION OF X-RAY-DIFFRACTION PROFILES OF GRADUALLY RELAXED EPILAYERS
Authors: SANZHERVAS A ABRIL EJ AGUILAR M DEBENITO G LLORENTE C LOPEZ M
Citation: A. Sanzhervas et al., SIMULATION OF X-RAY-DIFFRACTION PROFILES OF GRADUALLY RELAXED EPILAYERS, Mikrochimica acta, 1996, pp. 525-531
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM-WELL P-I-N PHOTODIODES GROWN ON (111)B GAAS/
Authors: SANZHERVAS A AGUILAR M SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM-WELL P-I-N PHOTODIODES GROWN ON (111)B GAAS/, Applied physics letters, 69(11), 1996, pp. 1574-1576
DESIGN AND CHARACTERIZATION OF (111)B INGAAS GAAS PIEZOELECTRIC SUPERLATTICES/
Authors: SANCHEZROJAS JL SACEDON A SANZHERVAS A CALLEJA E MUNOZ E ABRIL EJ AGUILAR M LOPEZ M
Citation: Jl. Sanchezrojas et al., DESIGN AND CHARACTERIZATION OF (111)B INGAAS GAAS PIEZOELECTRIC SUPERLATTICES/, Semiconductor science and technology, 10(8), 1995, pp. 1173-1176
CHARACTERIZATION OF SEMICONDUCTOR STRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: SANZHERVAS A ABRIL EJ PAZ DI DEBENITO G LLORENTE C AGUILAR M LOPEZ M
Citation: A. Sanzhervas et al., CHARACTERIZATION OF SEMICONDUCTOR STRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Materials science and technology, 11(1), 1995, pp. 72-79
A NEW DESIGN OF A SEMICONDUCTOR BOLOMETER ON RIGID SUBSTRATE FOR FUSION PLASMA DIAGNOSTICS
Authors: IBORRA E SANZHERVAS A RODRIGUEZ T
Citation: E. Iborra et al., A NEW DESIGN OF A SEMICONDUCTOR BOLOMETER ON RIGID SUBSTRATE FOR FUSION PLASMA DIAGNOSTICS, Review of scientific instruments, 64(7), 1993, pp. 1714-1717
Risultati: 1-18 |