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THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS
Authors: KAABI L BENBRAHIM J REMAKI B GONTRAND C ELOMARI H BUREAU JC SASSI Z BALLAND B
Citation: L. Kaabi et al., THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 49-52
RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS
Authors: KAABI L GONTRAND C BUREAU JC SASSI Z BENBRAHIM J BALLAND B
Citation: L. Kaabi et al., RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS, Annales de chimie, 23(1-2), 1998, pp. 359-364
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