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Results: 1-9 |
Results: 9
SIMULTANEOUS IN-SITU MEASUREMENT OF SUBSTRATE-TEMPERATURE AND LAYER THICKNESS USING DIFFUSE-REFLECTANCE SPECTROSCOPY (DRS) DURING MOLECULAR-BEAM EPITAXY
Authors: LI Y ZHOU JJ THOMPSON P PACHECO D SATO DL ARAIN O LEE HP
Citation: Y. Li et al., SIMULTANEOUS IN-SITU MEASUREMENT OF SUBSTRATE-TEMPERATURE AND LAYER THICKNESS USING DIFFUSE-REFLECTANCE SPECTROSCOPY (DRS) DURING MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 250-255
DIFFUSE-REFLECTANCE SPECTROSCOPY MEASUREMENT OF SUBSTRATE-TEMPERATUREAND TEMPERATURE TRANSIENT DURING MOLECULAR-BEAM EPITAXY AND IMPLICATIONS FOR LOW-TEMPERATURE III-V EPITAXY
Authors: THOMPSON P LI Y ZHOU JJ SATO DL FLANDERS L LEE HP
Citation: P. Thompson et al., DIFFUSE-REFLECTANCE SPECTROSCOPY MEASUREMENT OF SUBSTRATE-TEMPERATUREAND TEMPERATURE TRANSIENT DURING MOLECULAR-BEAM EPITAXY AND IMPLICATIONS FOR LOW-TEMPERATURE III-V EPITAXY, Applied physics letters, 70(12), 1997, pp. 1605-1607
METHODOLOGIES FOR IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF MOLECULAR-BEAM EPITAXY GROWTH OF ALAS GAAS DISTRIBUTED BRAGG REFLECTORS/
Authors: LEE HP LI Y SATO DL ZHOU JJ
Citation: Hp. Lee et al., METHODOLOGIES FOR IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF MOLECULAR-BEAM EPITAXY GROWTH OF ALAS GAAS DISTRIBUTED BRAGG REFLECTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2151-2156
IMPLEMENTATION OF A CLOSED-LOOP GROWTH SCHEME FOR ALAS-GAAS DISTRIBUTED-BRAGG-REFLECTOR (DBR) STRUCTURES USING IN-SITU PYROMETRIC INTERFEROMETRY MONITORING
Authors: LIU X RANALLI E SATO DL LEE HP
Citation: X. Liu et al., IMPLEMENTATION OF A CLOSED-LOOP GROWTH SCHEME FOR ALAS-GAAS DISTRIBUTED-BRAGG-REFLECTOR (DBR) STRUCTURES USING IN-SITU PYROMETRIC INTERFEROMETRY MONITORING, IEEE photonics technology letters, 8(3), 1996, pp. 340-342
IN-SITU PYROMETRIC INTERFEROMETRY MONITORING OF IN0.5GA0.5P IN0.5AL0.5P MATERIAL SYSTEMS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH/
Authors: SATO DL LEE HP KUO JM KUO HC
Citation: Dl. Sato et al., IN-SITU PYROMETRIC INTERFEROMETRY MONITORING OF IN0.5GA0.5P IN0.5AL0.5P MATERIAL SYSTEMS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH/, Journal of crystal growth, 164(1-4), 1996, pp. 47-50
PHYSICAL ORIGINS OF TEMPERATURE-VARIATION AND BACKGROUND-RADIATION ASSOCIATED WITH PYROMETRIC INTERFEROMETRY MEASUREMENT DURING ILL-V MOLECULAR-BEAM-EPITAXY GROWTH
Authors: ZHOU JJ LI Y THOMPSON P SATO DL LEE HP KUO JM
Citation: Jj. Zhou et al., PHYSICAL ORIGINS OF TEMPERATURE-VARIATION AND BACKGROUND-RADIATION ASSOCIATED WITH PYROMETRIC INTERFEROMETRY MEASUREMENT DURING ILL-V MOLECULAR-BEAM-EPITAXY GROWTH, Applied physics letters, 69(18), 1996, pp. 2683-2685
IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF III-V LAYERED STRUCTURES DURING MOLECULAR-BEAM EPITAXY GROWTH
Authors: LIU X RANALLI E SATO DL LI Y LEE HP
Citation: X. Liu et al., IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF III-V LAYERED STRUCTURES DURING MOLECULAR-BEAM EPITAXY GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 742-745
UNIFORM AND DELTA-DOPING OF CARBON IN GAAS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING ELECTRON-BEAM EVAPORATION - EVIDENCE FOR ATOMIC PAIRING
Authors: SATO DL SZALKOWSKI FJ LEE HP
Citation: Dl. Sato et al., UNIFORM AND DELTA-DOPING OF CARBON IN GAAS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING ELECTRON-BEAM EVAPORATION - EVIDENCE FOR ATOMIC PAIRING, Applied physics letters, 66(14), 1995, pp. 1791-1793
NOVEL INTEGRATION OF A GROUP IV ELECTRON-BEAM DEPOSITION CAPABILITY WITH A III-V MOLECULAR-BEAM EPITAXY SYSTEM
Authors: LEE HP SZALKOWSKI FJ SATO DL LIU X RANALLI E GEORGE T
Citation: Hp. Lee et al., NOVEL INTEGRATION OF A GROUP IV ELECTRON-BEAM DEPOSITION CAPABILITY WITH A III-V MOLECULAR-BEAM EPITAXY SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1163-1166
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