SIMULTANEOUS IN-SITU MEASUREMENT OF SUBSTRATE-TEMPERATURE AND LAYER THICKNESS USING DIFFUSE-REFLECTANCE SPECTROSCOPY (DRS) DURING MOLECULAR-BEAM EPITAXY

Authors
LI Y ZHOU JJ THOMPSON P PACHECO D SATO DL ARAIN O LEE HP
Citation
Y. Li et al., SIMULTANEOUS IN-SITU MEASUREMENT OF SUBSTRATE-TEMPERATURE AND LAYER THICKNESS USING DIFFUSE-REFLECTANCE SPECTROSCOPY (DRS) DURING MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 250-255
Citations number
15
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
1
Pages
250 - 255
Database
ISI
SICI code
0022-0248(1997)175:<250:SIMOSA>2.0.ZU;2-W
Abstract
Diffuse reflectance spectroscopy (DRS is used for in situ measurements of temperature transient and temperature drift during MBE growth of A lAs/GaAs and InGaAs/GaAs layered structures. The experimental results are compared together with pyrometric interferometry (PI) measurement taken concurrently. Our results shaw that DRS is a viable method for i n situ real-time monitoring of both substrate temperature and layer th ickness.