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Results:
1-12
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Results: 12
Authors:
MEUNIER C
MONTEIL C
SAVALL C
PALMINO F
WEBER J
BERJOAN R
DURAND J
Citation: C. Meunier et al., RBS-ERDA, XPS AND XRD CHARACTERIZATIONS OF PECVD TUNGSTEN NITRIDE FILMS, Applied surface science, 125(3-4), 1998, pp. 313-320
Authors:
BERTRAND G
SAVALL C
MEUNIER C
Citation: G. Bertrand et al., PROPERTIES OF REACTIVELY RF MAGNETRON-SPUTTERED CHROMIUM NITRIDE COATINGS, Surface & coatings technology, 96(2-3), 1997, pp. 323-329
Authors:
ROGE TP
PALMINO F
SAVALL C
LABRUNE JC
PIRRI C
Citation: Tp. Roge et al., ER-INDUCED 2-ROOT-3X2-ROOT-3R30-DEGREES RECONSTRUCTION ON SI(111) - INFLUENCE ON THE VERY-LOW ER COVERAGE SILICIDE GROWTH, Surface science, 383(2-3), 1997, pp. 350-361
Authors:
MARTIN N
ROUSSELOT C
SAVALL C
PALMINO F
Citation: N. Martin et al., CHARACTERIZATIONS OF TITANIUM-OXIDE FILMS PREPARED BY RADIO-FREQUENCYMAGNETRON SPUTTERING, Thin solid films, 287(1-2), 1996, pp. 154-163
Authors:
WETZEL P
SAINTENOY S
PIRRI C
BOLMONT D
GEWINNER G
ROGE TP
PALMINO F
SAVALL C
LABRUNE JC
Citation: P. Wetzel et al., STM INVESTIGATION OF 2-DIMENSIONAL AND 3-DIMENSIONAL ER DISILICIDE GROWN EPITAXIALLY ON SI(111), Surface science, 355(1-3), 1996, pp. 13-20
Authors:
ROGE TP
PALMINO F
SAVALL C
LABRUNE JC
SAINTENOY S
WETZEL P
PIRRI C
BOLMONT D
GEWINNER G
Citation: Tp. Roge et al., INITIAL GROWTH MODE OF ER SILICIDE ON SI(111) BY SOLID-PHASE EPITAXY, Surface science, 352, 1996, pp. 622-627
Authors:
FONTAINE F
DENEUVILLE A
LUCAZEAU E
GHEERAERT E
SAVALL C
BRUYERE JC
Citation: F. Fontaine et al., ANNEALING OF DIAMOND ABOVE 800-DEGREES-C - NEED FOR AND RESULTS OF SI3N4 ENCAPSULATION, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 596-599
Authors:
ROGE TP
PALMINO F
SAVALL C
LABRUNE JC
WETZEL P
PIRRI C
GEWINNER G
Citation: Tp. Roge et al., SURFACE RECONSTRUCTION OF ERSI1.7(0001) INVESTIGATED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 51(16), 1995, pp. 10998-11001
Authors:
SAVALL C
BRUYERE JC
STOQUERT JP
Citation: C. Savall et al., CHEMICAL-BONDS AND MICROSTRUCTURE IN NEARLY STOICHIOMETRIC PECVD ASI(X)N(Y)H(Z), Thin solid films, 260(2), 1995, pp. 174-180
Authors:
SAVALL C
BRUYERE JC
Citation: C. Savall et Jc. Bruyere, HYDROGEN AND DEUTERIUM MIGRATION IN ANNEALED PLASMA-DEPOSITED SILICON-NITRIDE FILMS, Thin solid films, 258(1-2), 1995, pp. 1-4
Authors:
SAVALL C
BRUYERE JC
KRAUTWURM J
Citation: C. Savall et al., CORRELATIONS BETWEEN ESR AND PHOTOLUMINESCENCE IN SLIGHTLY HYDROGENATED SILICON-NITRIDE, Journal of physics. D, Applied physics, 28(3), 1995, pp. 565-570
Authors:
BRUYERE JC
SAVALL C
REYNES B
BRUNEL M
ORTEGA L
Citation: Jc. Bruyere et al., DENSITY OF AS-DEPOSITED AND ANNEALED THIN SILICON-NITRIDE FILMS, Journal of physics. D, Applied physics, 26(4), 1993, pp. 713-716
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1-12
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