AAAAAA
Results:
1-7
|
Results: 7
Authors:
BUYANOVA IA
GORODETSKII IY
KORSUNSKAYA NE
SAVCHUK AU
SHEINKMAN MK
MELNIK TN
RARENKO IM
Citation: Ia. Buyanova et al., SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS, Semiconductors, 30(8), 1996, pp. 797-801
Authors:
BUYANOVA IA
OSTAPENKO SS
SAVCHUK AU
Citation: Ia. Buyanova et al., POLARIZATION SPECTROSCOPY OF LUMINESCENCE EXCITATION AS THE METHOD FOR CONTROL OF ELASTIC PRESSURES IN GAAS EPITAXIAL LAYERS, Zurnal tehniceskoj fiziki, 66(1), 1996, pp. 79-84
Authors:
BUYANOVA IA
KORSUNSKAYA NE
SAVCHUK AU
SHEINKMAN MK
VONBARDELEBEN HJ
Citation: Ia. Buyanova et al., EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS, Thin solid films, 255(1-2), 1995, pp. 185-187
Authors:
OSTAPENKO S
SAVCHUK AU
NOWAK G
LAGOWSKI J
HOFF AM
Citation: S. Ostapenko et al., ENHANCEMENT OF ROOM-TEMPERATURE PHOTOLUMINESCENCE IN THIN-FILM POLYCRYSTALLINE SILICON PRODUCED BY LOW-POWER LASER ANNEALING, Applied physics letters, 67(20), 1995, pp. 2942-2944
Authors:
BUYANOVA IA
SAVCHUK AU
SHEINKMAN MK
BUYANOV AV
Citation: Ia. Buyanova et al., EFFECT OF ULTRASONIC OSCILLATIONS OF PRET HRESHOLD INTENSITY ON DISLOCATION LUMINESCENCE OF SIGE EPITAXIAL LAYERS, Fizika tverdogo tela, 36(11), 1994, pp. 3233-3241
Authors:
BUYANOVA IA
SAVCHUK AU
SHEINKMAN MK
KITTLER M
Citation: Ia. Buyanova et al., INFLUENCE OF SUBTHRESHOLD ULTRASOUND TREATMENT ON THE RECOMBINATION PROPERTIES OF DISLOCATIONS IN GEXSI1-X-SI HETEROSTRUCTURES, Semiconductor science and technology, 9(11), 1994, pp. 2042-2046
Authors:
TANATAR MA
DYAKIN VV
SAVCHUK AU
Citation: Ma. Tanatar et al., BIREFRINGENCE STUDIES OF PHASE-TRANSITIONS IN (BEDT-TTF)2X-FAMILY COMPOUNDS, Synthetic metals, 56(1), 1993, pp. 2413-2418
Risultati:
1-7
|