Authors: PIZZINI S ACCIARRI M BINETTI S NARDUCCI D SAVIGNI C

Citation: S. Pizzini et al., RECENT ACHIEVEMENTS IN SEMICONDUCTOR DEFECT PASSIVATION, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 126-133

Authors: BINETTI S ACCIARRI M SAVIGNI C BRIANZA A PIZZINI S MUSINU A

Citation: S. Binetti et al., EFFECT OF NITROGEN CONTAMINATION BY CRUCIBLE ENCAPSULATION ON POLYCRYSTALLINE SILICON MATERIAL QUALITY, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 68-72

Authors: BINETTI S ACCIARRI M BRIANZA A SAVIGNI C PIZZINI S

Citation: S. Binetti et al., EFFECT OF OXYGEN CONCENTRATION ON DIFFUSION LENGTH IN CZOCHRALSKI ANDMAGNETIC CZOCHRALSKI SILICON, Materials science and technology, 11(7), 1995, pp. 665-669