Authors: SCHAEPKENS M OEHRLEIN GS HEDLUND C JONSSON LB BLOM HO

Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286

Authors: SCHAEPKENS M BOSCH RCM STANDAERT TEFM OEHRLEIN GS COOK JM

Citation: M. Schaepkens et al., INFLUENCE OF REACTOR WALL CONDITIONS ON ETCH PROCESSES IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2099-2107

Authors: STANDAERT TEFM SCHAEPKENS M RUEGER NR SEBEL PGM OEHRLEIN GS COOK JM

Citation: Tefm. Standaert et al., HIGH-DENSITY FLUOROCARBON ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED PLASMA - MECHANISM OF ETCHING THROUGH A THICK STEADY-STATE FLUOROCARBON LAYER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 239-249

Authors: SCHAEPKENS M OEHRLEIN GS

Citation: M. Schaepkens et Gs. Oehrlein, ASYMMETRIC MICROTRENCHING DURING INDUCTIVELY-COUPLED PLASMA OXIDE ETCHING IN THE PRESENCE OF A WEAK MAGNETIC-FIELD, Applied physics letters, 72(11), 1998, pp. 1293-1295

Authors: RUEGER NR BEULENS JJ SCHAEPKENS M DOEMLING MF MIRZA JM STANDAERT TEFM OEHRLEIN GS

Citation: Nr. Rueger et al., ROLE OF STEADY-STATE FLUOROCARBON FILMS IN THE ETCHING OF SILICON DIOXIDE USING CHF3 IN AN INDUCTIVELY-COUPLED PLASMA REACTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1881-1889

Authors: SEVERENS RJ VERHOEVEN HJM SCHAEPKENS M VANDESANDEN MCM SCHRAM DC

Citation: Rj. Severens et al., ELECTRODELESS THIN-FILM CONDUCTANCE MEASUREMENTS USING THE SOMMER-TANNER METHOD, Review of scientific instruments, 67(10), 1996, pp. 3624-3626