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Results: 2
UV, BLUE AND GREEN LIGHT-EMITTING-DIODES BASED ON GAN-INGAN MULTIPLE-QUANTUM WELLS OVER SAPPHIRE AND (111)-SPINEL SUBSTRATES
Authors: KHAN MA CHEN Q YANG J SUN CJ LIM B TEMKIN H SCHETZINA J SHUR MS
Citation: Ma. Khan et al., UV, BLUE AND GREEN LIGHT-EMITTING-DIODES BASED ON GAN-INGAN MULTIPLE-QUANTUM WELLS OVER SAPPHIRE AND (111)-SPINEL SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 265-268
GROWTH OF DEVICE-QUALITY GAN AT 550-DEGREES-C BY ATOMIC LAYER EPITAXY
Authors: KARAM NH PARODOS T COLTER P MCNULTY D ROWLAND W SCHETZINA J ELMASRY N BEDAIR SM
Citation: Nh. Karam et al., GROWTH OF DEVICE-QUALITY GAN AT 550-DEGREES-C BY ATOMIC LAYER EPITAXY, Applied physics letters, 67(1), 1995, pp. 94-96
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