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Citation: K. Eberl et al., FORMATION AND OPTICAL-PROPERTIES OF CARBON-INDUCED GE DOTS, Solid-state electronics, 42(7-8), 1998, pp. 1593-1597

Authors: SCHMIDT OG SCHIEKER S EBERL K KIENZLE O ERNST F

Citation: Og. Schmidt et al., CARBON-INDUCED GERMANIUM DOTS - KINETICALLY-LIMITED ISLANDING PROCESSPREVENTS COHERENT VERTICAL ALIGNMENT, Applied physics letters, 73(5), 1998, pp. 659-661

Authors: SCHIEKER S SCHMIDT OG EBERL K JINPHILLIPP NY PHILLIPP F

Citation: S. Schieker et al., ANNEALING EFFECTS ON CARBON-INDUCED GERMANIUM DOTS IN SILICON, Applied physics letters, 72(25), 1998, pp. 3344-3346