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Authors: DICKMANN J SCHILDBERG S RIEPE K MAILE BE SCHURR A GEYER A NAROZNY P

Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-X HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .1. OFF-STATE/, JPN J A P 1, 34(1), 1995, pp. 66-71

Authors: BAHL SR DELALAMO JA DICKMANN J SCHILDBERG S

Citation: Sr. Bahl et al., OFF-STATE BREAKDOWN IN INALAS INGAAS MODFETS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 15-22

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Citation: J. Dickmann et al., ANALYTICAL MODEL TO DETERMINE THE GATE LEAKAGE CURRENT IN IN0.52AL0.48AS INXGA1-XAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORSCAUSED BY THERMIONIC FIELD-EMISSION/, JPN J A P 1, 33(4A), 1994, pp. 1735-1739

Authors: BAHL SR DELALAMO JA DICKMANN J SCHILDBERG S

Citation: Sr. Bahl et al., IIIA-1 PHYSICS OF BREAKDOWN IN INALAS INGAAS MODFETS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2110-2111