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Results: 1-7 |
Results: 7
CHEMICAL CONVERSION OF SI TO SIC BY SOLID SOURCE MBE AND RTCVD
Authors: PEZOLDT J CIMALLA V STAUDEN T ECKE G EICHHORN G SCHARMANN F SCHIPANSKI D
Citation: J. Pezoldt et al., CHEMICAL CONVERSION OF SI TO SIC BY SOLID SOURCE MBE AND RTCVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1311-1315
THE POTENTIAL OF SIC AND GAN FOR APPLICATION IN HIGH-SPEED DEVICES
Authors: SCHWIERZ F KITTLER M FORSTER H SCHIPANSKI D
Citation: F. Schwierz et al., THE POTENTIAL OF SIC AND GAN FOR APPLICATION IN HIGH-SPEED DEVICES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1512-1514
THE CAPACITIVELY CONTROLLED FIELD-EFFECT TRANSISTOR (CCFET) AS A NEW LOW-POWER GAS SENSOR
Authors: GERGINTSCHEW Z KORNETZKY P SCHIPANSKI D
Citation: Z. Gergintschew et al., THE CAPACITIVELY CONTROLLED FIELD-EFFECT TRANSISTOR (CCFET) AS A NEW LOW-POWER GAS SENSOR, Sensors and actuators. B, Chemical, 36(1-3), 1996, pp. 285-289
AN IMPROVED VELOCITY OVERSHOOT MODEL FOR SUBMICRON-GATE MESFETS
Authors: SCHWIERZ F ROSSERG M NUERNBERGK D SCHIPANSKI D FOSTER H LIOU JJ
Citation: F. Schwierz et al., AN IMPROVED VELOCITY OVERSHOOT MODEL FOR SUBMICRON-GATE MESFETS, Solid-state electronics, 39(10), 1996, pp. 1522-1523
2-DIMENSIONAL NUMERICAL-SIMULATION OF SEMICONDUCTOR GAS SENSORS
Authors: GERGINTSCHEW Z FORSTER H KOSITZA J SCHIPANSKI D
Citation: Z. Gergintschew et al., 2-DIMENSIONAL NUMERICAL-SIMULATION OF SEMICONDUCTOR GAS SENSORS, Sensors and actuators. B, Chemical, 26(1-3), 1995, pp. 170-173
ANALYTICAL MODEL AND TEMPERATURE-DEPENDENCE OF THE THIN-FILM SOI FET
Authors: SCHEINERT S PAASCH G SCHIPANSKI D
Citation: S. Scheinert et al., ANALYTICAL MODEL AND TEMPERATURE-DEPENDENCE OF THE THIN-FILM SOI FET, Solid-state electronics, 38(5), 1995, pp. 949-959
SIMULATION OF THE LATERAL ELECTRICAL-FIELD FOR THE ANALYSIS OF THRESHOLD VOLTAGE INSTABILITIES OF SUSPENDED-GATE FIELD-EFFECT TRANSISTORS
Authors: GERGINTSCHEW Z SCHIPANSKI D KORNETZKY P EISELE I FLIETNER B
Citation: Z. Gergintschew et al., SIMULATION OF THE LATERAL ELECTRICAL-FIELD FOR THE ANALYSIS OF THRESHOLD VOLTAGE INSTABILITIES OF SUSPENDED-GATE FIELD-EFFECT TRANSISTORS, Sensors and actuators. B, Chemical, 12(3), 1993, pp. 231-235
Risultati: 1-7 |