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MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE
Authors: SCHLEIFER H KOWARIK O HOFFMANN K RECZEK W
Citation: H. Schleifer et al., MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE, Microelectronics and reliability, 38(6-8), 1998, pp. 1139-1141
DESIGN CONCEPT FOR RADIATION HARDENING OF LOW-POWER AND LOW-VOLTAGE DYNAMIC MEMORIES
Authors: SCHLEIFER H ROPP TVD HOFFMANN K RECZEK W
Citation: H. Schleifer et al., DESIGN CONCEPT FOR RADIATION HARDENING OF LOW-POWER AND LOW-VOLTAGE DYNAMIC MEMORIES, IEEE journal of solid-state circuits, 30(7), 1995, pp. 826-829
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