Authors:
SCHLEIFER H
KOWARIK O
HOFFMANN K
RECZEK W
Citation: H. Schleifer et al., MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE, Microelectronics and reliability, 38(6-8), 1998, pp. 1139-1141
Citation: H. Schleifer et al., DESIGN CONCEPT FOR RADIATION HARDENING OF LOW-POWER AND LOW-VOLTAGE DYNAMIC MEMORIES, IEEE journal of solid-state circuits, 30(7), 1995, pp. 826-829