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Results: 1-7 |
Results: 7

Authors: SCHOPKE A SELLE B SIEBER I REINSPERGER GU STAUSS P HERZ K POWALLA M
Citation: A. Schopke et al., CHARACTERIZATION OF THE STOICHIOMETRY OF COEVAPORATED FESIX FILMS BY AES, EDX, RES, AND ELECTRON-MICROSCOPY, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 322-325

Authors: SCHOPKE A KELLING S
Citation: A. Schopke et S. Kelling, REFINED APPROACH TO PCA-ASSISTED AUGER DEPTH PROFILE ANALYSIS, Surface and interface analysis, 25(1), 1997, pp. 5-9

Authors: BOHNE W FENSKE F KELLING S SCHOPKE A SELLE B
Citation: W. Bohne et al., REFINED RES AND AES TECHNIQUES FOR THE ANALYSIS OF THIN-FILMS USED INPHOTOVOLTAIC DEVICES, Physica status solidi. b, Basic research, 194(1), 1996, pp. 69-78

Authors: FENSKE F SCHOPKE A SCHULZE S SELLE B
Citation: F. Fenske et al., ANALYTICAL STUDIES OF NICKEL SILICIDE FORMATION THROUGH A THIN TI LAYER, Applied surface science, 104, 1996, pp. 218-222

Authors: SIEBER I SCHOPKE A SELLE B
Citation: I. Sieber et al., COMPARATIVE COMPOSITION ANALYSIS OF SIOX AND SINX THIN-FILMS BY AES, EDX AND RBS, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 639-641

Authors: ELSTNER B SCHOPKE A SELLE B
Citation: B. Elstner et al., RBS ANALYSIS OF THIN MOSIX FILMS - CORRELATION BETWEEN STOICHIOMETRY AND SOME FEATURES OF SPUTTERING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 297-300

Authors: REINSPERGER GU SCHOPKE A SELLE B
Citation: Gu. Reinsperger et al., QUANTITATIVE COMPOSITION ANALYSIS OF SEMICONDUCTING SILICIDE FILMS, Physica status solidi. a, Applied research, 145(2), 1994, pp. 425-428
Risultati: 1-7 |