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Results: 1-25 | 26-26
Results: 1-25/26
MEASUREMENTS OF EPITAXIALLY GROWN PT CAF2/SI(111) STRUCTURES BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SCANNING-TUNNELING-MICROSCOPY/
Authors: LABELLA VP SHUSTERMAN Y SCHOWALTER LJ VENTRICE CA
Citation: Vp. Labella et al., MEASUREMENTS OF EPITAXIALLY GROWN PT CAF2/SI(111) STRUCTURES BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1692-1696
BALLISTIC-ELECTRON-EMISSION MICROSCOPY MEASUREMENTS OF EPITAXIALLY GROWN PT CAF2/SI(111) STRUCTURES/
Authors: LABELLA VP VENTRICE CA SCHOWALTER LJ
Citation: Vp. Labella et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY MEASUREMENTS OF EPITAXIALLY GROWN PT CAF2/SI(111) STRUCTURES/, Applied surface science, 123, 1998, pp. 213-218
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF EPITAXIAL CDF2 LAYERS GROWN ON SI(111) AND CAF2(111) SUBSTRATES
Authors: LEE BC KHILKO AY SHUSTERMAN YV YAKOVLEV NL SOKOLOV NS KYUTT RN SUTURIN SM SCHOWALTER LJ
Citation: Bc. Lee et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF EPITAXIAL CDF2 LAYERS GROWN ON SI(111) AND CAF2(111) SUBSTRATES, Applied surface science, 123, 1998, pp. 590-594
SCANNING-TUNNELING-MICROSCOPY AND BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN PT CAF2/SI(111) STRUCTURES/
Authors: LABELLA VP SCHOWALTER LJ VENTRICE CA
Citation: Vp. Labella et al., SCANNING-TUNNELING-MICROSCOPY AND BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN PT CAF2/SI(111) STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1191-1195
DESIGN OF A SCANNING TUNNELING MICROSCOPE FOR IN-SITU TOPOGRAPHIC ANDSPECTROSCOPIC MEASUREMENTS WITHIN A COMMERCIAL MOLECULAR-BEAM EPITAXYMACHINE
Authors: VENTRICE CA LABELLA VP SCHOWALTER LJ
Citation: Ca. Ventrice et al., DESIGN OF A SCANNING TUNNELING MICROSCOPE FOR IN-SITU TOPOGRAPHIC ANDSPECTROSCOPIC MEASUREMENTS WITHIN A COMMERCIAL MOLECULAR-BEAM EPITAXYMACHINE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 830-835
IN-SITU MEASUREMENTS OF TEMPERATURE-DEPENDENT STRAIN RELAXATION OF GESI(111)/
Authors: DEELMAN PW SCHOWALTER LJ THUNDAT T
Citation: Pw. Deelman et al., IN-SITU MEASUREMENTS OF TEMPERATURE-DEPENDENT STRAIN RELAXATION OF GESI(111)/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 930-935
SELF-ASSEMBLED INAS ISLANDS ON GAAS((111)OVER-BAR) SUBSTRATES
Authors: SCHUJMAN SB SOSS SR STOKES K SCHOWALTER LJ
Citation: Sb. Schujman et al., SELF-ASSEMBLED INAS ISLANDS ON GAAS((111)OVER-BAR) SUBSTRATES, Surface science, 385(2-3), 1997, pp. 965-970
OPTICAL STUDIES OF GE ISLANDING ON SI(111)
Authors: PERSANS PD DEELMAN PW STOKES KL SCHOWALTER LJ BYRNE A THUNDAT T
Citation: Pd. Persans et al., OPTICAL STUDIES OF GE ISLANDING ON SI(111), Applied physics letters, 70(4), 1997, pp. 472-474
HETEROEPITAXY AND STRAIN - APPLICATIONS TO ELECTRONIC AND OPTOELECTRONIC MATERIALS
Authors: SCHOWALTER LJ
Citation: Lj. Schowalter, HETEROEPITAXY AND STRAIN - APPLICATIONS TO ELECTRONIC AND OPTOELECTRONIC MATERIALS, MRS bulletin, 21(4), 1996, pp. 18-19
SUBSTRATE ENGINEERING WITH PLASTIC BUFFER LAYERS
Authors: SCHOWALTER LJ
Citation: Lj. Schowalter, SUBSTRATE ENGINEERING WITH PLASTIC BUFFER LAYERS, MRS bulletin, 21(4), 1996, pp. 45-49
HOT-ELECTRON SCATTERING AT AU SI(100) SCHOTTKY INTERFACES MEASURED BYTEMPERATURE-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY/
Authors: VENTRICE CA LABELLA VP RAMASWAMY G YU HP SCHOWALTER LJ
Citation: Ca. Ventrice et al., HOT-ELECTRON SCATTERING AT AU SI(100) SCHOTTKY INTERFACES MEASURED BYTEMPERATURE-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Applied surface science, 104, 1996, pp. 274-281
MOLECULAR-BEAM EPITAXIAL-GROWTH OF THIN CAF2 FILMS ON VICINAL SI(111)SURFACES
Authors: KIM BM VENTRICE CA MERCER T OVERNEY R SCHOWALTER LJ
Citation: Bm. Kim et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF THIN CAF2 FILMS ON VICINAL SI(111)SURFACES, Applied surface science, 104, 1996, pp. 409-416
AFM AND RHEED STUDY OF GE ISLANDING ON SI(111) AND SI(100)
Authors: DEELMAN PW THUNDAT T SCHOWALTER LJ
Citation: Pw. Deelman et al., AFM AND RHEED STUDY OF GE ISLANDING ON SI(111) AND SI(100), Applied surface science, 104, 1996, pp. 510-515
MEASUREMENT OF HOT-ELECTRON SCATTERING PROCESSES AT AU SI(100) SCHOTTKY INTERFACES BY TEMPERATURE-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY/
Authors: VENTRICE CA LABELLA VP RAMASWAMY G YU HP SCHOWALTER LJ
Citation: Ca. Ventrice et al., MEASUREMENT OF HOT-ELECTRON SCATTERING PROCESSES AT AU SI(100) SCHOTTKY INTERFACES BY TEMPERATURE-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Physical review. B, Condensed matter, 53(7), 1996, pp. 3952-3959
SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 SI(111) AND ITS INFLUENCE ON SUBSEQUENT GAAS EPITAXY/
Authors: LI WD THUNDAT T ANAN T SCHOWALTER LJ
Citation: Wd. Li et al., SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 SI(111) AND ITS INFLUENCE ON SUBSEQUENT GAAS EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 670-673
ATOMIC STEP ORGANIZATION IN HOMOEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES
Authors: SCHOWALTER LJ YANG K THUNDAT T
Citation: Lj. Schowalter et al., ATOMIC STEP ORGANIZATION IN HOMOEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2579-2583
MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON CAF2 SI(111) SUBSTRATE/
Authors: LI WD ANAN T SCHOWALTER LJ
Citation: Wd. Li et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON CAF2 SI(111) SUBSTRATE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1067-1070
ATOMIC STEP ORGANIZATION IN HOMOEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES
Authors: SCHOWALTER LJ YANG K THUNDAT T
Citation: Lj. Schowalter et al., ATOMIC STEP ORGANIZATION IN HOMOEPITAXIAL GROWTH ON GAAS(111)B SUBSTRATES, Scanning microscopy, 8(4), 1994, pp. 889-896
EXPERIMENTAL-OBSERVATIONS OF A LONG-RANGE SURFACE-MODE IN METAL ISLAND FILMS
Authors: WU ZC ARAKAWA ET INAGAKI T THUNDAT T SCHOWALTER LJ
Citation: Zc. Wu et al., EXPERIMENTAL-OBSERVATIONS OF A LONG-RANGE SURFACE-MODE IN METAL ISLAND FILMS, Physical review. B, Condensed matter, 49(11), 1994, pp. 7782-7785
MEASUREMENT OF THE ACTIVATION BARRIER TO NUCLEATION OF DISLOCATIONS IN THIN-FILMS - COMMENT
Authors: AYERS JE SCHOWALTER LJ
Citation: Je. Ayers et Lj. Schowalter, MEASUREMENT OF THE ACTIVATION BARRIER TO NUCLEATION OF DISLOCATIONS IN THIN-FILMS - COMMENT, Physical review letters, 72(25), 1994, pp. 4055-4055
OPTIMIZATION OF GAAS EPITAXY ON CAF2 SI(111) SUBSTRATES/
Authors: LI WD ANAN T SCHOWALTER LJ
Citation: Wd. Li et al., OPTIMIZATION OF GAAS EPITAXY ON CAF2 SI(111) SUBSTRATES/, Journal of crystal growth, 135(1-2), 1994, pp. 78-84
NUCLEATION OF GAAS ON CAF2 SI(111) SUBSTRATES
Authors: LI WD ANAN T SCHOWALTER LJ
Citation: Wd. Li et al., NUCLEATION OF GAAS ON CAF2 SI(111) SUBSTRATES, Applied physics letters, 65(5), 1994, pp. 595-597
STRAIN IN PSEUDOMORPHIC FILMS GROWN ON ARBITRARILY ORIENTED SUBSTRATES
Authors: YANG K ANAN T SCHOWALTER LJ
Citation: K. Yang et al., STRAIN IN PSEUDOMORPHIC FILMS GROWN ON ARBITRARILY ORIENTED SUBSTRATES, Applied physics letters, 65(22), 1994, pp. 2789-2791
DIFFUSION LENGTH OF GA ADATOMS ON GAAS ((111)OVER-BAR) SURFACE IN THEROOT-19X-ROOT-19 RECONSTRUCTION GROWTH REGIME
Authors: YANG K SCHOWALTER LJ THUNDAT T
Citation: K. Yang et al., DIFFUSION LENGTH OF GA ADATOMS ON GAAS ((111)OVER-BAR) SURFACE IN THEROOT-19X-ROOT-19 RECONSTRUCTION GROWTH REGIME, Applied physics letters, 64(13), 1994, pp. 1641-1643
DIFFUSIVE AND INELASTIC-SCATTERING IN BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY
Authors: LEE EY TURNER BR SCHOWALTER LJ JIMENEZ JR
Citation: Ey. Lee et al., DIFFUSIVE AND INELASTIC-SCATTERING IN BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1579-1583
Risultati: 1-25 | 26-26