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Results: 1-13 |
Results: 13
ENERGY-LOSS MEASUREMENTS FOR 20-KEV POSITRONS IN AL THIN-FILMS
Authors: MASSOUMI GR LENNARD WN SCHULTZ PJ PORCELLI TA SIMPSON PJ
Citation: Gr. Massoumi et al., ENERGY-LOSS MEASUREMENTS FOR 20-KEV POSITRONS IN AL THIN-FILMS, Applied surface science, 85(1-4), 1995, pp. 39-42
VARIABLE-ENERGY POSITRON BEAM STUDY OF ARSENIC DIFFUSION IN POLYSILICON
Authors: LAWTHER DW KHATRI R SIMPSON PJ SCHULTZ PJ CALDER I WEAVER L
Citation: Dw. Lawther et al., VARIABLE-ENERGY POSITRON BEAM STUDY OF ARSENIC DIFFUSION IN POLYSILICON, Applied surface science, 85(1-4), 1995, pp. 265-270
DETERMINATION OF THE CHARACTERISTIC SIGNAL FOR POSITRON-ANNIHILATION AT DIVACANCIES IN ION-IRRADIATED SILICON
Authors: GOLDBERG RD SCHULTZ PJ SIMPSON PJ
Citation: Rd. Goldberg et al., DETERMINATION OF THE CHARACTERISTIC SIGNAL FOR POSITRON-ANNIHILATION AT DIVACANCIES IN ION-IRRADIATED SILICON, Applied surface science, 85(1-4), 1995, pp. 287-291
MEASUREMENT OF OXIDE THICKNESS USING A VARIABLE-ENERGY POSITRON BEAM
Authors: LEUNG TC SIMPSON PJ ATKINSON A MITCHELL IV SCHULTZ PJ
Citation: Tc. Leung et al., MEASUREMENT OF OXIDE THICKNESS USING A VARIABLE-ENERGY POSITRON BEAM, Applied surface science, 85(1-4), 1995, pp. 292-294
STOPPING POWERS FOR POSITRONS AND ELECTRONS
Authors: LENNARD WN MASSOUMI GR SCHULTZ PJ SIMPSON PJ AERS GC
Citation: Wn. Lennard et al., STOPPING POWERS FOR POSITRONS AND ELECTRONS, Physical review letters, 74(20), 1995, pp. 3947-3950
ROLE OF ENDOTHELIAL-DERIVED NITRIC-OXIDE IN NORMAL AND HYPERTENSIVE PULMONARY VASCULATURE
Authors: ARCHER S HAMPL V MCKENZIE Z NELSON D HUANG J SCHULTZ PJ WEIR EK
Citation: S. Archer et al., ROLE OF ENDOTHELIAL-DERIVED NITRIC-OXIDE IN NORMAL AND HYPERTENSIVE PULMONARY VASCULATURE, Seminars in respiratory and critical care medicine, 15(3), 1994, pp. 179-189
DETAILS OF THE DAMAGE PROFILE IN SELF-ION-IMPLANTED SILICON
Authors: ZHANG PX MITCHELL IV SCHULTZ PJ LOCKWOOD DJ
Citation: Px. Zhang et al., DETAILS OF THE DAMAGE PROFILE IN SELF-ION-IMPLANTED SILICON, Journal of Raman spectroscopy, 25(7-8), 1994, pp. 515-520
POSITRON AND ELECTRON-SOLID INTERACTIONS
Authors: SCHULTZ PJ MASSOUMI GR LENNARD WN
Citation: Pj. Schultz et al., POSITRON AND ELECTRON-SOLID INTERACTIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 567-578
NEAR-SURFACE STRUCTURE OF LOW-ENERGY-ARGON-BOMBARDED SI(100)
Authors: HUANG LJ LAU WM TANG HT LENNARD WN MITCHELL IV SCHULTZ PJ KASRAI M
Citation: Lj. Huang et al., NEAR-SURFACE STRUCTURE OF LOW-ENERGY-ARGON-BOMBARDED SI(100), Physical review. B, Condensed matter, 50(24), 1994, pp. 18453-18468
DEPTH-DEPENDENT DISORDERING IN ALPHA-SI PRODUCED BY SELF-ION-IMPLANTATION
Authors: ZHANG PX MITCHELL IV TONG BY SCHULTZ PJ LOCKWOOD DJ
Citation: Px. Zhang et al., DEPTH-DEPENDENT DISORDERING IN ALPHA-SI PRODUCED BY SELF-ION-IMPLANTATION, Physical review. B, Condensed matter, 50(23), 1994, pp. 17080-17084
VOID FORMATION AT SILICON-NITRIDE SILICON INTERFACES STUDIED BY VARIABLE-ENERGY POSITRONS
Authors: HALEC A SCHULTZ PJ BOUDREAU M BOUMERZOUG M MASCHER P MCCAFFREY JP JACKMAN TE
Citation: A. Halec et al., VOID FORMATION AT SILICON-NITRIDE SILICON INTERFACES STUDIED BY VARIABLE-ENERGY POSITRONS, Surface and interface analysis, 21(12), 1994, pp. 839-845
ANNEALING PROPERTIES OF THE 0.5-ML PD CU(100) SURFACE ALLOY/
Authors: ANDERSON GW POPE TD JENSEN KO GRIFFITHS K NORTON PR SCHULTZ PJ
Citation: Gw. Anderson et al., ANNEALING PROPERTIES OF THE 0.5-ML PD CU(100) SURFACE ALLOY/, Physical review. B, Condensed matter, 48(20), 1993, pp. 15283-15288
ELECTRON AND POSITRON BACKSCATTERING IN THE MEDIUM-ENERGY RANGE
Authors: MASSOUMI GR LENNARD WN SCHULTZ PJ WALKER AB JENSEN KO
Citation: Gr. Massoumi et al., ELECTRON AND POSITRON BACKSCATTERING IN THE MEDIUM-ENERGY RANGE, Physical review. B, Condensed matter, 47(17), 1993, pp. 11007-11018
Risultati: 1-13 |