Authors: SCHWARTZ PV BUBBER R PARANJPE AP KOOLS JCS

Citation: Pv. Schwartz et al., MEETING THE PROCESS CHALLENGES FOR SPIN-VALVE FABRICATION ON AN INDUSTRIAL-SCALE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 3080-3083

Authors: KOOLS JCS PARANJPE AP SCHWARTZ PV BUBBER R BERGNER B KULA W RIJKS TGSM

Citation: Jcs. Kools et al., PROCESS MONITORING OF SPIN-VALVE GMR DEPOSITION, IEEE transactions on magnetics, 34(4), 1998, pp. 945-947

Authors: LONNGREN KE SCHWARTZ PV BAI EW

Citation: Ke. Lonngren et al., DEVICE PHYSICS USING THE METHOD OF MOMENTS, IEEE transactions on education, 41(2), 1998, pp. 112-115

Authors: LILIENTALWEBER Z SCHWARTZ PV WU CC STURM JC

Citation: Z. Lilientalweber et al., STRUCTURE OF OXYGEN-DOPED SILICON GROWN BY CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2511-2515

Authors: LONNGREN KE SCHWARTZ PV BAI EW THEISEN WC MERLINO RL CARPENTER RT

Citation: Ke. Lonngren et al., EXTRACTING DOUBLE-LAYER CHARGE-DENSITY DISTRIBUTIONS USING THE METHODOF MOMENTS, IEEE transactions on plasma science, 22(3), 1994, pp. 278-280

Authors: SCHWARTZ PV STURM JC

Citation: Pv. Schwartz et Jc. Sturm, OXYGEN INCORPORATION DURING LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITIONGROWTH OF EPITAXIAL SILICON FILMS, Journal of the Electrochemical Society, 141(5), 1994, pp. 1284-1290