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Results:
1-12
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Results: 12
Authors:
RADOJKOVIC P
SCHWARTZKOPFF M
GABRIEL T
HARTMANN E
Citation: P. Radojkovic et al., STM-ASSISTED MANIPULATION OF AG NANOPARTICLES, Applied physics A: Materials science & processing, 66, 1998, pp. 701-705
Authors:
ORTSIEFER M
LIEBHEIT A
SCHWARTZKOPFF M
RADOJKOVIC P
GABRIEL T
HARTMANN E
Citation: M. Ortsiefer et al., STM-EXCITED AND SPECTRALLY RESOLVED LUMINESCENCE OF EPITAXIAL GAN ANDALGAN LAYERS GROWN BY MBE, Applied physics A: Materials science & processing, 66, 1998, pp. 371-375
Authors:
KOVALEV D
HECKLER H
AVERBOUKH B
BENCHORIN M
SCHWARTZKOPFF M
KOCH F
Citation: D. Kovalev et al., HOLE-BURNING SPECTROSCOPY OF POROUS SILICON, Physical review. B, Condensed matter, 57(7), 1998, pp. 3741-3744
Authors:
RADOJKOVIC P
SCHWARTZKOPFF M
GABRIEL T
HARTMANN E
Citation: P. Radojkovic et al., METALLIC NANOPARTICLES FOR COMPACT NANOSTRUCTURE FABRICATION AND OBSERVATION OF SINGLE-ELECTRON PHENOMENA AT ROOM-TEMPERATURE, Solid-state electronics, 42(7-8), 1998, pp. 1287-1292
Authors:
KOVALEV D
HECKLER H
BENCHORIN M
POLISSKI G
SCHWARTZKOPFF M
KOCH F
Citation: D. Kovalev et al., BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS, Physical review letters, 81(13), 1998, pp. 2803-2806
Authors:
POLISSKI G
HECKLER H
KOVALEV D
SCHWARTZKOPFF M
KOCH F
Citation: G. Polisski et al., LUMINESCENCE OF POROUS SILICON IN A WEAK CONFINEMENT REGIME, Applied physics letters, 73(8), 1998, pp. 1107-1109
Authors:
LIEBHEIT A
SCHWARTZKOPFF M
RADOJKOVIC P
HARTMANN E
HECHTL E
PETROVAKOCH V
KOCH F
Citation: A. Liebheit et al., STM EXCITED ELECTROLUMINESCENCE OF GAN MICROCRYSTALS, Journal of luminescence, 72-4, 1997, pp. 994-996
Authors:
RADOJKOVIC P
SCHWARTZKOPFF M
ENACHESCU M
STEFANOV E
HARTMANN E
KOCH F
Citation: P. Radojkovic et al., OBSERVATION OF COULOMB STAIRCASE AND NEGATIVE DIFFERENTIAL RESISTANCEAT ROOM-TEMPERATURE BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1229-1233
ELECTRON-STIMULATED DESORPTION OF HYDROGEN FROM THE SI(111) SURFACE BY SCANNING-TUNNELING-MICROSCOPY
Authors:
SCHWARTZKOPFF M
RADOJKOVIC P
ENACHESCU M
HARTMANN E
KOCH F
Citation: M. Schwartzkopff et al., ELECTRON-STIMULATED DESORPTION OF HYDROGEN FROM THE SI(111) SURFACE BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1336-1340
Authors:
HARTMANN E
ENACHESCU M
RADOJKOVIC P
SCHWARTZKOPFF M
KOCH F
Citation: E. Hartmann et al., IMAGING AND MANIPULATION PROPERTIES OF NANOPARTICLES IN SCANNING-TUNNELING-MICROSCOPY, Nanotechnology, 7(4), 1996, pp. 376-380
Authors:
HARTMANN E
RADOJKOVIC P
SCHWARTZKOPFF M
ENACHESCU M
MARQUARDT P
Citation: E. Hartmann et al., COMPARATIVE SCANNING-TUNNELING-MICROSCOPY INVESTIGATIONS OF NANOSTRUCTURES PREPARED BY DIFFERENT TECHNIQUES, Applied surface science, 107, 1996, pp. 212-217
Authors:
RADOJKOVIC P
HARTMANN E
SCHWARTZKOPFF M
ENACHESCU M
STEFANOV E
KOCH F
Citation: P. Radojkovic et al., COULOMB STAIRCASE WITH NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE FOR A METAL TIP METAL DOT SEMICONDUCTOR DOUBLE JUNCTION, Surface science, 362(1-3), 1996, pp. 890-893
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