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Results:
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Results: 7
ION-IMPLANTED NORMALLY-OFF GAAS BIPOLAR-MODE FET (BMFET) FOR APPLICATION IN A WIDE TEMPERATURE-RANGE
Authors:
COCORULLO G
DELLACORTE F
HARTNAGEL HL
SCHWEEGER G
Citation: G. Cocorullo et al., ION-IMPLANTED NORMALLY-OFF GAAS BIPOLAR-MODE FET (BMFET) FOR APPLICATION IN A WIDE TEMPERATURE-RANGE, Semiconductor science and technology, 11(5), 1996, pp. 776-782
Authors:
BELLONE S
RINALDI N
VITALE GF
COCORULLO G
SCHWEEGER G
HARTNAGEL HL
Citation: S. Bellone et al., A 2-DIMENSIONAL ANALYTICAL MODEL OF HOMOJUNCTION GAAS BMFET STRUCTURES, Solid-state electronics, 39(8), 1996, pp. 1221-1229
Authors:
ALLER I
LANG C
SCHWEEGER G
HARTNAGEL HL
DOLT R
HOHENBERG G
Citation: I. Aller et al., GALLIUM-ARSENIDE PIEZOTRANSISTOR FOR DYNAMIC PRESSURE MEASUREMENTS ATHIGH-TEMPERATURE, Applied physics letters, 69(3), 1996, pp. 403-405
Authors:
HJORT K
SCHWEEGER G
DEHE A
FRICKE K
HARTNAGEL HL
Citation: K. Hjort et al., THICKNESS-FIELD EXCITED THICKNESS-SHEAR RESONATORS IN (110)GAAS, Applied physics letters, 66(3), 1995, pp. 326-328
Authors:
SCHWEEGER G
HASEGAWA H
HARTNAGEL HL
Citation: G. Schweeger et al., FABRICATION AND CHARACTERIZATION OF DIRECT SCHOTTKY CONTACTS TO 2-DIMENSIONAL ELECTRON-GAS IN GAAS ALGAAS QUANTUM-WELLS/, JPN J A P 1, 33(1B), 1994, pp. 779-785
Authors:
HASHIZUME T
SCHWEEGER G
WU NJ
HASEGAWA H
Citation: T. Hashizume et al., NOVEL IN-SITU ELECTROCHEMICAL TECHNOLOGY FOR FORMATION OF OXIDE-FREE AND DEFECT-FREE SCHOTTKY CONTACT TO GAAS AND RELATED LOW-DIMENSIONAL STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2660-2666
Authors:
SCHWEEGER G
LANG C
FRICKE K
HARTNAGEL HL
DOLT R
HOHENBERG G
Citation: G. Schweeger et al., ACTIVE GAAS SENSOR ELEMENT FOR DYNAMIC PRESSURE MEASUREMENTS, Electronics Letters, 30(16), 1994, pp. 1355-1356
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