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An investigation of the atomic and electronic defectuality in Sm-doped Mg2SiO4, by high temperature electrical conductivity measurements
Authors:
MORLOTTI R OTTONELLO G SCIUTO P F
Citation:
R. Morlotti et al., An investigation of the atomic and electronic defectuality in Sm-doped Mg2SiO4, by high temperature electrical conductivity measurements, Mineralogica et petrographica acta , 37, 1994, pp. 219-228
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