Authors: MCDERMOTT BT GERTNER ER PITTMAN S SEABURY CW CHANG MF

Citation: Bt. Mcdermott et al., GROWTH AND DOPING OF GAASSB VIA METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR INP HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 68(10), 1996, pp. 1386-1388

Authors: MCDERMOTT BT SEABURY CW FARLEY CW HIGGINS JA

Citation: Bt. Mcdermott et al., HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS, Journal of electronic materials, 22(5), 1993, pp. 555-558

Authors: SEABURY CW FARLEY CW MCDERMOTT BT HIGGINS JA LIN CL KIRCHNER PJ WOODALL JM GEE RC

Citation: Cw. Seabury et al., BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2123-2124

Authors: GEE RC LIN CL FARLEY CW SEABURY CW HIGGINS JA KIRCHNER PD WOODALL JM ASBECK PM

Citation: Rc. Gee et al., INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS/, Electronics Letters, 29(10), 1993, pp. 850-851