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MCDERMOTT BT
GERTNER ER
PITTMAN S
SEABURY CW
CHANG MF
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Authors:
MCDERMOTT BT
SEABURY CW
FARLEY CW
HIGGINS JA
Citation: Bt. Mcdermott et al., HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS, Journal of electronic materials, 22(5), 1993, pp. 555-558
Authors:
SEABURY CW
FARLEY CW
MCDERMOTT BT
HIGGINS JA
LIN CL
KIRCHNER PJ
WOODALL JM
GEE RC
Citation: Cw. Seabury et al., BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2123-2124