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Results: 1-25 | 26-50 | 51-53
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ION-BEAM SYNTHESIS OF AMORPHOUS GALLIUM NITRIDE
Authors: ALMEIDA SA SILVA SRP SEALY BJ WATTS JF
Citation: Sa. Almeida et al., ION-BEAM SYNTHESIS OF AMORPHOUS GALLIUM NITRIDE, Philosophical magazine letters, 78(4), 1998, pp. 319-324
MECHANICAL STRAIN AND DEFECTS IN THE END-OF-RANGE REGION IN SILICON IMPLANTED WITH GE-IMPLANTED WITH C+ IONS( AND CO)
Authors: SUPRUNBELEVICH Y CRISTIANO F NEJIM A HEMMENT PLF SEALY BJ
Citation: Y. Suprunbelevich et al., MECHANICAL STRAIN AND DEFECTS IN THE END-OF-RANGE REGION IN SILICON IMPLANTED WITH GE-IMPLANTED WITH C+ IONS( AND CO), Semiconductor science and technology, 13(2), 1998, pp. 220-225
A STUDY OF THE EVOLUTION OF CARRIER AND VACANCY DEPTH PROFILES WITH ANNEALING TEMPERATURE OF SI-IMPLANTED GAAS
Authors: KNIGHTS AP APIWATWAJA R GWILLIAM R SEALY BJ COLEMAN PG
Citation: Ap. Knights et al., A STUDY OF THE EVOLUTION OF CARRIER AND VACANCY DEPTH PROFILES WITH ANNEALING TEMPERATURE OF SI-IMPLANTED GAAS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1266-1271
EVOLUTION OF MECHANICAL STRAIN AND EXTENDED DEFECTS IN ANNEALED (100)SILICON SAMPLES IMPLANTED WITH GE+ IONS
Authors: SUPRUNBELEVICH Y CRISTIANO F NEJIM A HEMMENT PLF SEALY BJ
Citation: Y. Suprunbelevich et al., EVOLUTION OF MECHANICAL STRAIN AND EXTENDED DEFECTS IN ANNEALED (100)SILICON SAMPLES IMPLANTED WITH GE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(1-2), 1998, pp. 91-98
RBS SIMULATED ANNEALING ANALYSIS OF SILICIDE FORMATION IN FE/SI SYSTEMS/
Authors: BARRADAS NP JEYNES C HOMEWOOD KP SEALY BJ MILOSAVLJEVIC M
Citation: Np. Barradas et al., RBS SIMULATED ANNEALING ANALYSIS OF SILICIDE FORMATION IN FE/SI SYSTEMS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 235-238
RESIDUAL POST ANNEAL DAMAGE OF GE-COIMPLANTATION AND C-COIMPLANTATIONOF SI DETERMINED BY QUANTITATIVE RBS-CHANNELING
Authors: NEJIM A BARRADAS NP JEYNES C CRISTIANO F WENDLER E GARTNER K SEALY BJ
Citation: A. Nejim et al., RESIDUAL POST ANNEAL DAMAGE OF GE-COIMPLANTATION AND C-COIMPLANTATIONOF SI DETERMINED BY QUANTITATIVE RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 244-248
LATTICE SITE LOCATION OF THULIUM AND ERBIUM IMPLANTED GAAS
Authors: ALVES E DASILVA MF SOARES JC HENRY MO GWILLIAM R SEALY BJ FREITAG K VIANDEN R STIEVENARD D
Citation: E. Alves et al., LATTICE SITE LOCATION OF THULIUM AND ERBIUM IMPLANTED GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 421-425
ION-BEAM ANALYSIS OF 6H SIC IMPLANTED WITH ERBIUM AND YTTERBIUM IONS
Authors: KOZANECKI A JEYNES C SEALY BJ NEJIM A
Citation: A. Kozanecki et al., ION-BEAM ANALYSIS OF 6H SIC IMPLANTED WITH ERBIUM AND YTTERBIUM IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1272-1276
THE MICROSTRUCTURAL DEPENDENCE OF THE OPTOELECTRONIC PROPERTIES OF NITROGENATED HYDROGENATED AMORPHOUS-CARBON THIN-FILMS
Authors: SILVA SRP KHAN RUA BURDEN AP ANGUITA JV SHANNON JM SEALY BJ PAPWORTH AJ KIELY CJ AMARATUNGA GAJ
Citation: Srp. Silva et al., THE MICROSTRUCTURAL DEPENDENCE OF THE OPTOELECTRONIC PROPERTIES OF NITROGENATED HYDROGENATED AMORPHOUS-CARBON THIN-FILMS, Thin solid films, 332(1-2), 1998, pp. 118-123
PROGRAMMABLE DEVICES BASED ON CURRENT-INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON ALLOYS
Authors: SHANNON JM LAU SP ANNIS AD SEALY BJ
Citation: Jm. Shannon et al., PROGRAMMABLE DEVICES BASED ON CURRENT-INDUCED CONDUCTIVITY IN AMORPHOUS-SILICON ALLOYS, Solid-state electronics, 42(1), 1998, pp. 91-99
CHANGES IN THE POOLE-FRENKEL COEFFICIENT WITH CURRENT-INDUCED DEFECT BAND CONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON NITRIDE
Authors: LAU SP SHANNON JM SEALY BJ
Citation: Sp. Lau et al., CHANGES IN THE POOLE-FRENKEL COEFFICIENT WITH CURRENT-INDUCED DEFECT BAND CONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON NITRIDE, Journal of non-crystalline solids, 230, 1998, pp. 533-537
BARRIER HEIGHT CHANGES IN AMORPHOUS-SILICON SCHOTTKY DIODES FOLLOWINGDOPANT IMPLANTATION
Authors: CHAI MK SHANNON JM SEALY BJ
Citation: Mk. Chai et al., BARRIER HEIGHT CHANGES IN AMORPHOUS-SILICON SCHOTTKY DIODES FOLLOWINGDOPANT IMPLANTATION, Electronics Letters, 34(9), 1998, pp. 919-921
EXCITATION OF ER3+ IONS IN SILICON DIOXIDE FILMS THERMALLY GROWN ON SILICON
Authors: KOZANECKI A STEPIKHOVA M LANZERSTORFER S JANTSCH W PALMETSHOFER L SEALY BJ JEYNES C
Citation: A. Kozanecki et al., EXCITATION OF ER3+ IONS IN SILICON DIOXIDE FILMS THERMALLY GROWN ON SILICON, Applied physics letters, 73(20), 1998, pp. 2929-2931
INFRARED LUMINESCENCE IN ER AND ER+O IMPLANTED 6H SIC
Authors: KOZANECKI N JANTSCH W HEIS W PRECHTL G SEALY BJ JEYNES C
Citation: N. Kozanecki et al., INFRARED LUMINESCENCE IN ER AND ER+O IMPLANTED 6H SIC, Acta Physica Polonica. A, 92(5), 1997, pp. 879-882
ELECTRICAL CHARACTERIZATION OF SILICON-NITRIDE PRODUCED BY PLASMA IMMERSION ION-IMPLANTATION
Authors: CHEN SM SHANNON JM GWILLIAM RM SEALY BJ
Citation: Sm. Chen et al., ELECTRICAL CHARACTERIZATION OF SILICON-NITRIDE PRODUCED BY PLASMA IMMERSION ION-IMPLANTATION, Surface & coatings technology, 93(2-3), 1997, pp. 269-273
BEAM-POWER HEATING EFFECT ON THE SYNTHESIS OF GRADED COMPOSITION EPITAXIAL SI1-XGEX ALLOY LAYERS
Authors: CURELLO G GWILLIAM R HARRY M JACKSON S SEALY BJ
Citation: G. Curello et al., BEAM-POWER HEATING EFFECT ON THE SYNTHESIS OF GRADED COMPOSITION EPITAXIAL SI1-XGEX ALLOY LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 129(3), 1997, pp. 377-386
THERMAL EVOLUTION OF ION-BEAM SYNTHESIZED COSI2 LAYERS IN SI0.64GE0.36 ALLOY
Authors: CURELLO G GWILLIAM R HARRY M SEALY BJ RODRIGUEZ T
Citation: G. Curello et al., THERMAL EVOLUTION OF ION-BEAM SYNTHESIZED COSI2 LAYERS IN SI0.64GE0.36 ALLOY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 328-332
ELECTRICAL EFFECTS OF NITROGEN PLASMA IMMERSION ION-IMPLANTATION ON SILICON
Authors: CHEN SM SHANNON JM GWILLIAM RM SEALY BJ
Citation: Sm. Chen et al., ELECTRICAL EFFECTS OF NITROGEN PLASMA IMMERSION ION-IMPLANTATION ON SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 901-904
MOS DEVICE FABRICATION VIA PLASMA IMMERSION ION-IMPLANTATION
Authors: CHEN SM GWILLIAM RM SEALY BJ
Citation: Sm. Chen et al., MOS DEVICE FABRICATION VIA PLASMA IMMERSION ION-IMPLANTATION, Solid-state electronics, 41(4), 1997, pp. 535-537
ELECTRONIC EFFECTS OF ION DAMAGE IN HYDROGENATED AMORPHOUS-SILICON ALLOYS
Authors: VANSWAAIJ RACMM ANNIS AD SEALY BJ SHANNON JM
Citation: Racmm. Vanswaaij et al., ELECTRONIC EFFECTS OF ION DAMAGE IN HYDROGENATED AMORPHOUS-SILICON ALLOYS, Journal of applied physics, 82(10), 1997, pp. 4800-4804
ACTIVATION MODELING OF SI IMPLANTED GAAS
Authors: APIWATWAJA R GWILLIAM R WILSON R SEALY BJ
Citation: R. Apiwatwaja et al., ACTIVATION MODELING OF SI IMPLANTED GAAS, Journal of applied physics, 81(3), 1997, pp. 1131-1134
EFFECT OF FORMING GAS ANNEALS ON THE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE SILICON FORMED BY SI+ IMPLANTATION INTO SIO2 MATRIX
Authors: KOMODA T WEBER J HOMEWOOD KP HEMMENT PLF SEALY BJ
Citation: T. Komoda et al., EFFECT OF FORMING GAS ANNEALS ON THE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE SILICON FORMED BY SI+ IMPLANTATION INTO SIO2 MATRIX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 93-96
LATERALLY RESOLVED CRYSTALLINE DAMAGE IN SINGLE-POINT-DIAMOND-TURNED SILICON
Authors: JEYNES C PUTTICK KE WHITMORE LC GARTNER K GEE AE MILLEN DK WEBB RP PEEL RMA SEALY BJ
Citation: C. Jeynes et al., LATERALLY RESOLVED CRYSTALLINE DAMAGE IN SINGLE-POINT-DIAMOND-TURNED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 431-436
ANALYSIS OF STRAIN IN ULTRA-THIN GAAS IN0.2GA0.8AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES BY CHANNELING TECHNIQUE/
Authors: KOZANECKI A KACZANOWSKI J SEALY BJ GILLIN WP
Citation: A. Kozanecki et al., ANALYSIS OF STRAIN IN ULTRA-THIN GAAS IN0.2GA0.8AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES BY CHANNELING TECHNIQUE/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 640-644
LATTICE LOCATION OF ERBIUM ATOMS IMPLANTED INTO SILICON
Authors: KOZANECKI A KACZANOWSKI J WILSON R SEALY BJ
Citation: A. Kozanecki et al., LATTICE LOCATION OF ERBIUM ATOMS IMPLANTED INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 709-713
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