MOS DEVICE FABRICATION VIA PLASMA IMMERSION ION-IMPLANTATION

Authors
CHEN SM GWILLIAM RM SEALY BJ
Citation
Sm. Chen et al., MOS DEVICE FABRICATION VIA PLASMA IMMERSION ION-IMPLANTATION, Solid-state electronics, 41(4), 1997, pp. 535-537
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
4
Year of publication
1997
Pages
535 - 537
Database
ISI
SICI code
0038-1101(1997)41:4<535:MDFVPI>2.0.ZU;2-O
Abstract
MOS capacitors have been fabricated by plasma immersion ion implantati on (PIII) of oxygen or nitrogen ions into p-type (100) silicon wafers. The processing gas pressure was 3 x 10(-4) Torr for oxygen and 2 x 10 (-4) Torr for nitrogen. After annealing some of the implanted samples in Ar at 1000 degrees C for 30 min, it was found that about 250 Angstr om thick insulating layers, with a relative permittivity of epsilon(ox )=similar to 5 and epsilon(nit)=similar to 7, were synthesized for oxy gen and nitrogen implants, respectively. (C) 1997 Elsevier Science Ltd .