Authors: HAUKSSON IS SEGHIER D GISLASON KP BROWNLIE GD PRIOR KA CAVENETT BC

Citation: Is. Hauksson et al., DLTS AND DRIFT MOBILITY MEASUREMENTS ON MBE-GROWN NITROGEN-DOPED ZNSE, Journal of crystal growth, 185, 1998, pp. 490-494

Authors: SEGHIER D HAUKSSON IS GISLASON HP BROWNLIE GD PRIOR KA CAVENETT BC

Citation: D. Seghier et al., ELECTRICAL CHARACTERIZATION OF HOLE TRAPS IN P-TYPE ZNSE AND ZNSSE GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(23), 1998, pp. 3026-3028

Authors: SEGHIER D GISLASON HP

Citation: D. Seghier et Hp. Gislason, EFFECT OF THE INTERFACE ON THE ELECTRICAL-PROPERTIES OF ZNSE GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 71(16), 1997, pp. 2295-2297

Authors: SEGHIER D

Citation: D. Seghier, PHOTOINDUCED CURRENT SPECTROSCOPY STUDY ON SEMIINSULATING LEC GAAS, Journal of physics. D, Applied physics, 29(4), 1996, pp. 1071-1073

Authors: SEGHIER D

Citation: D. Seghier, IDENTIFICATION OF DEEP DEFECTS IN HIGH-RESISTIVITY UNDOPED LEC-GAAS IRRADIATED WITH PROTONS, Journal of physics. D, Applied physics, 29(12), 1996, pp. 3101-3105

Authors: SEGHIER D BENYATTOU T KALBOUSSI A MONEGER S MARRAKCHI G GUILLOT G LAMBERT B GUIVARCH A

Citation: D. Seghier et al., OPTICAL AND ELECTRICAL-PROPERTIES OF RARE-EARTH (YB,ER) DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(8), 1994, pp. 4171-4175