DLTS AND DRIFT MOBILITY MEASUREMENTS ON MBE-GROWN NITROGEN-DOPED ZNSE

We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectros copy. A hole trap with activation energy E-v + 0.11 eV is attributed t o a nitrogen acceptor which controls the p-type conduction in the mate rials. The drift mobility was measured using a time-of-flight techniqu e. Values ranging from 5 to 80 cm(2)/V s were obtained at room tempera ture, depending on doping level. (C) 1998 Elsevier Science B.V. All ri ghts reserved.