AAAAAA

   
Results: 1-9 |
Results: 9
STUDY OF LATERAL POLYSILICON PN DIODES C-V CHARACTERISTICS - MODELINGAND EXPERIMENTS
Authors: AMRANI M SEHIL H MENEZLA R BENAMARA Z RAOULT F
Citation: M. Amrani et al., STUDY OF LATERAL POLYSILICON PN DIODES C-V CHARACTERISTICS - MODELINGAND EXPERIMENTS, Solid-state electronics, 42(11), 1998, pp. 1925-1931
SIMULATION OF THE HIGH-FREQUENCY C-V CHARACTERISTICS OF LATERAL PN JUNCTIONS ON POLYSILICON FILMS
Authors: AMRANI M MENEZLA R SEHIL H RAOULT F BOUDIAF H BENAMARA Z
Citation: M. Amrani et al., SIMULATION OF THE HIGH-FREQUENCY C-V CHARACTERISTICS OF LATERAL PN JUNCTIONS ON POLYSILICON FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 49(3), 1997, pp. 197-201
A MOS STRUCTURE TEMPERATURE CHARACTERIZATION
Authors: BOUZIDI A BOUDISSA A BENAMARA Z ANANI M SEHIL H AKKAL B
Citation: A. Bouzidi et al., A MOS STRUCTURE TEMPERATURE CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 48(3), 1997, pp. 234-238
CHARACTERIZATION OF THE POLYSILICON THIN-FILM TRANSISTORS ELABORATED IN HIGH AND LOW-TEMPERATURE PROCESSES - STUDY OF THE DENSITY OF TRAPS
Authors: SEHIL H RAHMANI NM PICHON L MENEZLA R RAOULT F BENAMARA Z
Citation: H. Sehil et al., CHARACTERIZATION OF THE POLYSILICON THIN-FILM TRANSISTORS ELABORATED IN HIGH AND LOW-TEMPERATURE PROCESSES - STUDY OF THE DENSITY OF TRAPS, Synthetic metals, 90(3), 1997, pp. 181-185
EFFECTS OF THE IN-SITU DRAIN DOPING ON HOT-CARRIER DEGRADATION IN POLYSILICON THIN-FILM TRANSISTORS
Authors: PICHON L RAOULT F MOHAMEDBRAHIM T BONNAUD O SEHIL H
Citation: L. Pichon et al., EFFECTS OF THE IN-SITU DRAIN DOPING ON HOT-CARRIER DEGRADATION IN POLYSILICON THIN-FILM TRANSISTORS, Solid-state electronics, 39(7), 1996, pp. 1065-1069
THE ANALYSIS OF THE LEAKAGE CURRENT OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AS A FUNCTION OF ACTIVE LAYER THICKNESS
Authors: SEHIL H RAHMANI NM RAOULT F
Citation: H. Sehil et al., THE ANALYSIS OF THE LEAKAGE CURRENT OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AS A FUNCTION OF ACTIVE LAYER THICKNESS, Materials chemistry and physics, 42(2), 1995, pp. 101-105
CONDUCTION BEHAVIOR OF LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON TFTS WITH AN IN-SITU DRAIN DOPING LEVEL
Authors: PICHON L RAOULT F BONNAUD O SEHIL H BRIAND D
Citation: L. Pichon et al., CONDUCTION BEHAVIOR OF LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON TFTS WITH AN IN-SITU DRAIN DOPING LEVEL, Solid-state electronics, 38(8), 1995, pp. 1515-1521
EFFECT OF THICKNESS AND GRANULAR STRUCTURE ON THE ELECTRICAL-CONDUCTIVITY OF THE ACTIVE LAYER IN POLYCRYSTALLINE SILICON TFTS
Authors: SEHIL H LHERMITE H RAOULT F COLIN Y
Citation: H. Sehil et al., EFFECT OF THICKNESS AND GRANULAR STRUCTURE ON THE ELECTRICAL-CONDUCTIVITY OF THE ACTIVE LAYER IN POLYCRYSTALLINE SILICON TFTS, Solid-state electronics, 37(1), 1994, pp. 159-168
EFFECT OF THE ACTIVE LAYER THICKNESS ON THE LEAKAGE CURRENT IN P+P P+ACCUMULATION POLYCRYSTALLINE SILICON TFTS
Authors: SEHIL H RAOULT F COLIN Y BONNAUD O
Citation: H. Sehil et al., EFFECT OF THE ACTIVE LAYER THICKNESS ON THE LEAKAGE CURRENT IN P+P P+ACCUMULATION POLYCRYSTALLINE SILICON TFTS, Materials chemistry and physics, 34(1), 1993, pp. 62-67
Risultati: 1-9 |