THE ANALYSIS OF THE LEAKAGE CURRENT OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AS A FUNCTION OF ACTIVE LAYER THICKNESS

The variation of electrical conductivity and generation current in the active layer of polycrystalline silicon thin-film transistors (TFTs) was analysed as a function of the thickness of this layer. A simple mo del for the active layer and numerical solution of Poisson's equation in two dimensions has shown that the electrical conductivity, together with the generation current, does depend on the carrier traps at the grain boundaries and on the electrostatic coupling between the oxide/s ilicon interface or between the interfaces and the parallel grain boun dary when present.