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Results: 1-8 |
Results: 8
OPTIMIZATION OF RF MAGNETRON SPUTTERING AND RTA-CRYSTALLIZATION OF PB(ZR0.52TI0.48)O-3 THIN-FILMS BY MEANS OF THE ORTHOGONAL ARRAY METHOD
Authors: DEFAY E LEBERRE M SEMMACHE B TROCCAZ M BARBIER D
Citation: E. Defay et al., OPTIMIZATION OF RF MAGNETRON SPUTTERING AND RTA-CRYSTALLIZATION OF PB(ZR0.52TI0.48)O-3 THIN-FILMS BY MEANS OF THE ORTHOGONAL ARRAY METHOD, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 123-129
SIMS DEPTH PROFILE CORRECTION FOR THE STUDY OF THE FIRST STEP OF THE DIFFUSION OF BORON IN SILICON
Authors: GAUTIER B DUPUY JC SEMMACHE B PRUDON G
Citation: B. Gautier et al., SIMS DEPTH PROFILE CORRECTION FOR THE STUDY OF THE FIRST STEP OF THE DIFFUSION OF BORON IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(3), 1998, pp. 361-376
STRESS-DEPENDENT HOLE EFFECTIVE MASSES AND PIEZORESISTIVE PROPERTIES OF P-TYPE MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON
Authors: KLEIMANN P SEMMACHE B LEBERRE M BARBIER D
Citation: P. Kleimann et al., STRESS-DEPENDENT HOLE EFFECTIVE MASSES AND PIEZORESISTIVE PROPERTIES OF P-TYPE MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON, Physical review. B, Condensed matter, 57(15), 1998, pp. 8966-8971
THERMAL DRIFT OF PIEZORESISTIVE PROPERTIES OF LPCVD POLYSILICON THIN-FILMS BETWEEN ROOM-TEMPERATURE AND 200-DEGREES-C
Authors: KLEIMANN P SEMMACHE B LEBERRE M BARBIER D
Citation: P. Kleimann et al., THERMAL DRIFT OF PIEZORESISTIVE PROPERTIES OF LPCVD POLYSILICON THIN-FILMS BETWEEN ROOM-TEMPERATURE AND 200-DEGREES-C, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 43-46
SILICON-NITRIDE AND OXYNITRIDE DEPOSITION BY RT-LPCVD
Authors: SEMMACHE B LEMITI M CHANELIERE C DUBOIS C SIBAI A CANUT B LAUGIER A
Citation: B. Semmache et al., SILICON-NITRIDE AND OXYNITRIDE DEPOSITION BY RT-LPCVD, Thin solid films, 296(1-2), 1997, pp. 32-36
ELECTRICAL AND PIEZORESISTIVE CHARACTERIZATION OF BORON-DOPED LPCVD POLYCRYSTALLINE SILICON UNDER RAPID THERMAL ANNEALING
Authors: LEBERRE M KLEIMANN P SEMMACHE B BARBIER D PINARD P
Citation: M. Leberre et al., ELECTRICAL AND PIEZORESISTIVE CHARACTERIZATION OF BORON-DOPED LPCVD POLYCRYSTALLINE SILICON UNDER RAPID THERMAL ANNEALING, Sensors and actuators. A, Physical, 54(1-3), 1996, pp. 700-703
ABOUT BORON AND ARSENIC DIFFUSIONS IN POLYCRYSTALLINE SILICON UNDER RAPID THERMAL-OXIDATION
Authors: SEMMACHE B MERABET A GONTRAND C LAUGIER A
Citation: B. Semmache et al., ABOUT BORON AND ARSENIC DIFFUSIONS IN POLYCRYSTALLINE SILICON UNDER RAPID THERMAL-OXIDATION, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 41-45
RAPID THERMAL-PROCESSING OF PIEZORESISTIVE POLYCRYSTALLINE SILICON FILMS - AN INNOVATIVE TECHNOLOGY FOR LOW-COST PRESSURE SENSOR FABRICATION
Authors: SEMMACHE B KLEIMANN P LEBERRE M LEMITI M BARBIER D PINARD P
Citation: B. Semmache et al., RAPID THERMAL-PROCESSING OF PIEZORESISTIVE POLYCRYSTALLINE SILICON FILMS - AN INNOVATIVE TECHNOLOGY FOR LOW-COST PRESSURE SENSOR FABRICATION, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 76-81
Risultati: 1-8 |