Authors:
MYASNIKOV AM
OBODNIKOV VI
SERYAPIN VG
TISHKOVSKII EG
FOMIN BI
CHEREPOV EI
Citation: Am. Myasnikov et al., KINETICS OF THE REDISTRIBUTION OF AN IMPURITY IN QUASI-PERIODIC STRUCTURES APPEARING IN HEAVILY BORON-DOPED SILICON IRRADIATED BY BORON IONS, Semiconductors, 31(6), 1997, pp. 600-604
Authors:
MYASNIKOV AM
OBODNIKOV VI
SERYAPIN VG
TISHKOVSKII EG
FOMIN BI
CHEREPOV EI
Citation: Am. Myasnikov et al., FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION, Semiconductors, 31(3), 1997, pp. 279-282
Authors:
MYASNIKOV AM
OBODNIKOV VI
SERYAPIN VG
TISHKOVSKII EG
FOMIN BI
CHEREPOV EI
Citation: Am. Myasnikov et al., FORMATION OF A LAYERED STRUCTURE IN THE DISTRIBUTION OF BORON ATOMS INITIATED IN SILICON BY ION-IMPLANTATION, JETP letters, 60(2), 1994, pp. 102-105