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KINETICS OF THE REDISTRIBUTION OF AN IMPURITY IN QUASI-PERIODIC STRUCTURES APPEARING IN HEAVILY BORON-DOPED SILICON IRRADIATED BY BORON IONS
Authors: MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation: Am. Myasnikov et al., KINETICS OF THE REDISTRIBUTION OF AN IMPURITY IN QUASI-PERIODIC STRUCTURES APPEARING IN HEAVILY BORON-DOPED SILICON IRRADIATED BY BORON IONS, Semiconductors, 31(6), 1997, pp. 600-604
FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION
Authors: MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation: Am. Myasnikov et al., FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION, Semiconductors, 31(3), 1997, pp. 279-282
FORMATION OF A LAYERED STRUCTURE IN THE DISTRIBUTION OF BORON ATOMS INITIATED IN SILICON BY ION-IMPLANTATION
Authors: MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation: Am. Myasnikov et al., FORMATION OF A LAYERED STRUCTURE IN THE DISTRIBUTION OF BORON ATOMS INITIATED IN SILICON BY ION-IMPLANTATION, JETP letters, 60(2), 1994, pp. 102-105
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