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RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES
Authors:
ZHDAN AG LIFSHITS TM RYLKOV VV SHAFRAN AG
Citation:
Ag. Zhdan et al., RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES, Semiconductors, 27(5), 1993, pp. 465-467
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