Authors: HENRY BM STATONBEVAN AE SHARMA VKM CROUCH MA

Citation: Bm. Henry et al., A SIMS AND TEM INVESTIGATION OF AU TI/PD SOLID-STATE OHMIC CONTACTS ON P-GAAS/, Applied surface science, 108(4), 1997, pp. 485-493

Authors: CONIBEER GJ WILLOUGHBY AFW HARDINGHAM CM SHARMA VKM

Citation: Gj. Conibeer et al., ZINC DIFFUSION IN TELLURIUM DOPED GALLIUM ANTIMONIDE, Optical materials, 6(1-2), 1996, pp. 21-25

Authors: CONIBEER GJ WILLOUGHBY AFW HARDINGHAM CM SHARMA VKM

Citation: Gj. Conibeer et al., ZINC DIFFUSION IN TELLURIUM DOPED GALLIUM ANTIMONIDE, Journal of electronic materials, 25(7), 1996, pp. 1108-1112

Authors: HSU CM SHARMA VKM ASHWIN MJ MCPHAIL DS

Citation: Cm. Hsu et al., SIMS ANALYSIS OF AL DELTA-DOPED GAAS TEST STRUCTURES USING CHEMICAL BEVELLING AS A SAMPLE PREPARATION TECHNIQUE, Surface and interface analysis, 23(10), 1995, pp. 665-672

Authors: SHARMA VKM MCPHAIL DS FAHY MR

Citation: Vkm. Sharma et al., ION YIELD EFFECTS IN THE SIMS ANALYSIS OF SILICON DELTA-DOPED LAYERS IN GAAS, Surface and interface analysis, 23(10), 1995, pp. 723-728

Authors: SHARMA VKM MCPHAIL DS HSU CM FAHY MR

Citation: Vkm. Sharma et al., A METHOD OF IMPROVING THE SIMS ANALYSIS OF SI IN GAAS BY MONITORING SIO2(-) IONS AT OBLIQUE ANGLES OF BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 391-394