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Results: 1-16 |
Results: 16
2 WAYS OF POROUS SI PHOTOLUMINESCENCE EXCITATION
Authors: TORCHINSKAYA TV KORSUNSKAYA NE KHOMENKOVA LY SHEINKMAN MK BARAN NP MISIUK A SURMA B DZHUMAEV B
Citation: Tv. Torchinskaya et al., 2 WAYS OF POROUS SI PHOTOLUMINESCENCE EXCITATION, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 162-165
ROLE OF IONIC PROCESSES IN DEGRADATION OF WIDE-GAP II-VI SEMICONDUCTOR-MATERIALS
Authors: BORKOVSKAYA LV DZHYMAEV BR KORSUNSKAYA NE MARKEVICH IV SINGAEVSKY AF SHEINKMAN MK
Citation: Lv. Borkovskaya et al., ROLE OF IONIC PROCESSES IN DEGRADATION OF WIDE-GAP II-VI SEMICONDUCTOR-MATERIALS, Acta Physica Polonica. A, 94(2), 1998, pp. 255-259
PHOTOLUMINESCENCE AND EPR STUDIES OF POROUS SILICON
Authors: TORCHINSKAYA TV BARAN NP KORSUNSKAYA NE DZHUMAEV BR KHOMENKOVA LY SHEINKMAN MK
Citation: Tv. Torchinskaya et al., PHOTOLUMINESCENCE AND EPR STUDIES OF POROUS SILICON, Journal of luminescence, 72-4, 1997, pp. 400-402
SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS
Authors: BUYANOVA IA GORODETSKII IY KORSUNSKAYA NE SAVCHUK AU SHEINKMAN MK MELNIK TN RARENKO IM
Citation: Ia. Buyanova et al., SENSITIZED LUMINESCENCE OF POROUS SILICON AND ITS POLARIZATION CHARACTERISTICS, Semiconductors, 30(8), 1996, pp. 797-801
NATURE OF THE METASTABLE CENTERS RESPONSIBLE FOR THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE (0001) FACE OF CDS CRYSTALS
Authors: DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV SHEINKMAN MK
Citation: Ia. Drozdova et al., NATURE OF THE METASTABLE CENTERS RESPONSIBLE FOR THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE (0001) FACE OF CDS CRYSTALS, Semiconductors, 30(2), 1996, pp. 181-182
PHOTOSENSITIVITY PROFILE FORMATION IN BULK CDS SINGLE-CRYSTALS BY THEACTION OF AN EXTERNAL ELECTRIC-FIELD
Authors: KISLYUK VV KORSUNSKAYA NE MARKEVICH IV PEKAR GS SINGAEVSKII AF SHEINKMAN MK
Citation: Vv. Kislyuk et al., PHOTOSENSITIVITY PROFILE FORMATION IN BULK CDS SINGLE-CRYSTALS BY THEACTION OF AN EXTERNAL ELECTRIC-FIELD, Semiconductors, 30(10), 1996, pp. 986-987
MANIFESTATION OF EFFECTIVE-MASS STATES OF SECONDARY MINIMA IN THE PERSISTENT PHOTOCONDUCTIVITY RELATED TO THE DX CENTER IN ALXGA1-XAS
Authors: BELYAEV AE RYABCHENKO YS SHEINKMAN MK VONBARDELEBEN HJ
Citation: Ae. Belyaev et al., MANIFESTATION OF EFFECTIVE-MASS STATES OF SECONDARY MINIMA IN THE PERSISTENT PHOTOCONDUCTIVITY RELATED TO THE DX CENTER IN ALXGA1-XAS, Semiconductor science and technology, 11(1), 1996, pp. 68-73
NON-ACTIVATION DONOR MOVEMENT UNDER THE U LTRASOUND IN CDS CRYSTALS
Authors: BORKOVSKAYA LV DZHUMAEV BR DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF SHEINKMAN MK
Citation: Lv. Borkovskaya et al., NON-ACTIVATION DONOR MOVEMENT UNDER THE U LTRASOUND IN CDS CRYSTALS, Fizika tverdogo tela, 37(9), 1995, pp. 2745-2748
EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS
Authors: BUYANOVA IA KORSUNSKAYA NE SAVCHUK AU SHEINKMAN MK VONBARDELEBEN HJ
Citation: Ia. Buyanova et al., EXCITATION MECHANISM OF POROUS SILICON LUMINESCENCE - THE ROLE OF SENSITIZERS, Thin solid films, 255(1-2), 1995, pp. 185-187
ULTRASONICALLY INDUCED TRANSFORMATION OF DX CENTERS IN ALGAAS-SI
Authors: BELYAEV AE VONBARDELEBEN HJ OBORINA EI RYABCHENKO YS SAVCHUK AI FIJE ML SHEINKMAN MK
Citation: Ae. Belyaev et al., ULTRASONICALLY INDUCED TRANSFORMATION OF DX CENTERS IN ALGAAS-SI, Semiconductors, 28(9), 1994, pp. 863-865
EFFECT OF ULTRASONIC OSCILLATIONS OF PRET HRESHOLD INTENSITY ON DISLOCATION LUMINESCENCE OF SIGE EPITAXIAL LAYERS
Authors: BUYANOVA IA SAVCHUK AU SHEINKMAN MK BUYANOV AV
Citation: Ia. Buyanova et al., EFFECT OF ULTRASONIC OSCILLATIONS OF PRET HRESHOLD INTENSITY ON DISLOCATION LUMINESCENCE OF SIGE EPITAXIAL LAYERS, Fizika tverdogo tela, 36(11), 1994, pp. 3233-3241
ULTRASOUND REGENERATION OF EL2 CENTERS IN GAAS
Authors: BUYANOVA IA OSTAPENKO SS SHEINKMAN MK MURRIKOV M
Citation: Ia. Buyanova et al., ULTRASOUND REGENERATION OF EL2 CENTERS IN GAAS, Semiconductor science and technology, 9(2), 1994, pp. 158-162
INFLUENCE OF SUBTHRESHOLD ULTRASOUND TREATMENT ON THE RECOMBINATION PROPERTIES OF DISLOCATIONS IN GEXSI1-X-SI HETEROSTRUCTURES
Authors: BUYANOVA IA SAVCHUK AU SHEINKMAN MK KITTLER M
Citation: Ia. Buyanova et al., INFLUENCE OF SUBTHRESHOLD ULTRASOUND TREATMENT ON THE RECOMBINATION PROPERTIES OF DISLOCATIONS IN GEXSI1-X-SI HETEROSTRUCTURES, Semiconductor science and technology, 9(11), 1994, pp. 2042-2046
SYMMETRY OF OPTICALLY-ACTIVE YB-RELATED CENTERS IN INP AND IN1-XGAXP (X-LESS-THAN-OR-EQUAL-TO-0.13)
Authors: BUYANOVA IA NEUHALFEN AJ WESSELS BW SHEINKMAN MK
Citation: Ia. Buyanova et al., SYMMETRY OF OPTICALLY-ACTIVE YB-RELATED CENTERS IN INP AND IN1-XGAXP (X-LESS-THAN-OR-EQUAL-TO-0.13), Journal of applied physics, 76(2), 1994, pp. 1180-1183
IMPACT EXCITATION OF EMISSION CENTERS IN NONRADIATIVE AUGER RECOMBINATION OF CARRIERS IN CADMIUM BROMIDE CRYSTALS
Authors: BONDAR VD LYSKOVICH AB MARKEVICH TV SHEINKMAN MK
Citation: Vd. Bondar et al., IMPACT EXCITATION OF EMISSION CENTERS IN NONRADIATIVE AUGER RECOMBINATION OF CARRIERS IN CADMIUM BROMIDE CRYSTALS, Fizika tverdogo tela, 35(7), 1993, pp. 1847-1851
TRANSFORMATION OF EXCITONIC AND DA LUMINESCENCE SPECTRA OF GAPN LIGHT-EMITTING STRUCTURES ON THE INTRODUCTION OF DISLOCATIONS
Authors: TORCHINSKAYA TV KORSUNSKAYA NE SHEINKMAN MK
Citation: Tv. Torchinskaya et al., TRANSFORMATION OF EXCITONIC AND DA LUMINESCENCE SPECTRA OF GAPN LIGHT-EMITTING STRUCTURES ON THE INTRODUCTION OF DISLOCATIONS, Semiconductor science and technology, 7(3), 1992, pp. 385-390
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