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Results: 1-25 | 26-28
Results: 1-25/28
ELECTRICAL CHARACTERISTICS OF HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS USING SPACER LAYERS
Authors: LIN YS SHIEH HM HSU WC SU JS HUANG JZ WU YH HO SD LIN W
Citation: Ys. Lin et al., ELECTRICAL CHARACTERISTICS OF HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS USING SPACER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 958-961
AUGMENTATION OF HORMONAL ACTIVITIES WITH ANTIBODIES FROM CATTLE IMMUNIZED WITH A COMBINATION OF SYNTHETIC AND RECOMBINANT GROWTH-HORMONE PEPTIDE
Authors: WANG BS SEARCH DJ LUMANGLAS AA INGLING J CORBETT MJ SHIEH HM KRAFT LA
Citation: Bs. Wang et al., AUGMENTATION OF HORMONAL ACTIVITIES WITH ANTIBODIES FROM CATTLE IMMUNIZED WITH A COMBINATION OF SYNTHETIC AND RECOMBINANT GROWTH-HORMONE PEPTIDE, Animal biotechnology, 9(2), 1998, pp. 121-133
AUGMENTATION OF HORMONAL ACTIVITIES WITH ANTIBODIES FROM CATTLE IMMUNIZED WITH A COMBINATION OF SYNTHETIC AND RECOMBINANT GROWTH-HORMONE PEPTIDE
Authors: WANG BS SEARCH DJ LUMANGLAS AA INGLING J CORBETT MJ SHIEH HM KRAFT LA
Citation: Bs. Wang et al., AUGMENTATION OF HORMONAL ACTIVITIES WITH ANTIBODIES FROM CATTLE IMMUNIZED WITH A COMBINATION OF SYNTHETIC AND RECOMBINANT GROWTH-HORMONE PEPTIDE, Animal biotechnology, 9(1), 1998, pp. 21-33
IMMUNOLOGICAL EFFECT OF A SYNTHETIC GROWTH-HORMONE PEPTIDE ON THE GROWTH-PERFORMANCE IN SWINE
Authors: WANG BS LUMANGLAS AA SHIEH HM CORBETT MJ ZHANG RJ KRAFT LA
Citation: Bs. Wang et al., IMMUNOLOGICAL EFFECT OF A SYNTHETIC GROWTH-HORMONE PEPTIDE ON THE GROWTH-PERFORMANCE IN SWINE, Molecular immunology, 33(7-8), 1996, pp. 609-614
INVESTIGATION OF THE ELECTRON-TRANSFER CHARACTERISTICS IN MULTI-DELTA-DOPED GAAS-FETS
Authors: KAO MJ SHIEH HM HSU WC LIN TY WU YH HSU RT
Citation: Mj. Kao et al., INVESTIGATION OF THE ELECTRON-TRANSFER CHARACTERISTICS IN MULTI-DELTA-DOPED GAAS-FETS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1181-1186
HIGH CARRIER DENSITY AND MOBILITY IN GAAS INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES/
Authors: KAO MJ HSU WC SHIEH HM LIU WC CHANG CY
Citation: Mj. Kao et al., HIGH CARRIER DENSITY AND MOBILITY IN GAAS INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES/, JPN J A P 2, 34(1A), 1995, pp. 1-3
A NOVEL DELTA-DOPED GAAS INGAAS REAL-SPACE TRANSFER TRANSISTOR WITH HIGH PEAK-TO-VALLEY RATIO AND HIGH-CURRENT DRIVING CAPABILITY/
Authors: WU CL HSU WC SHIEH HM TSAI MS
Citation: Cl. Wu et al., A NOVEL DELTA-DOPED GAAS INGAAS REAL-SPACE TRANSFER TRANSISTOR WITH HIGH PEAK-TO-VALLEY RATIO AND HIGH-CURRENT DRIVING CAPABILITY/, IEEE electron device letters, 16(3), 1995, pp. 112-114
IMPROVED MOBILITIES AND CONCENTRATIONS IN DOUBLE-QUANTUM-WELL INGAAS GAAS PSEUDOMORPHIC HFETS USING MULTICOUPLED DELTA-DOPED GAAS/
Authors: KAO MJ HSU WC SHIEH HM LIN TY
Citation: Mj. Kao et al., IMPROVED MOBILITIES AND CONCENTRATIONS IN DOUBLE-QUANTUM-WELL INGAAS GAAS PSEUDOMORPHIC HFETS USING MULTICOUPLED DELTA-DOPED GAAS/, Solid-state electronics, 38(6), 1995, pp. 1171-1173
DEPLETION-MIS-LIKE INGAAS GAAS DELTA-DOPED STRUCTURES WITH HIGH BREAKDOWN VOLTAGE AND LARGE GATE VOLTAGE SWING/
Authors: WU CL HSU WC SHIEH HM KAO MJ
Citation: Cl. Wu et al., DEPLETION-MIS-LIKE INGAAS GAAS DELTA-DOPED STRUCTURES WITH HIGH BREAKDOWN VOLTAGE AND LARGE GATE VOLTAGE SWING/, Solid-state electronics, 38(2), 1995, pp. 433-436
PERIODICITY OF POLAR AND NONPOLAR AMINO-ACIDS IS THE MAJOR DETERMINANT OF SECONDARY STRUCTURE IN SELF-ASSEMBLING OLIGOMERIC PEPTIDES
Authors: XIONG HY BUCKWALTER BL SHIEH HM HECHT MH
Citation: Hy. Xiong et al., PERIODICITY OF POLAR AND NONPOLAR AMINO-ACIDS IS THE MAJOR DETERMINANT OF SECONDARY STRUCTURE IN SELF-ASSEMBLING OLIGOMERIC PEPTIDES, Proceedings of the National Academy of Sciences of the United Statesof America, 92(14), 1995, pp. 6349-6353
AUGMENTATION OF THE EFFECTIVENESS OF PORCINE GH WITH SWINE ANTIBODIESINDUCED BY A SYNTHETIC GH PEPTIDE
Authors: WANG BS CORBETT MJ SHIEH HM SADEGHI H
Citation: Bs. Wang et al., AUGMENTATION OF THE EFFECTIVENESS OF PORCINE GH WITH SWINE ANTIBODIESINDUCED BY A SYNTHETIC GH PEPTIDE, Journal of Endocrinology, 145(1), 1995, pp. 163-167
EPITOPE MAPPING AND ANALYSIS OF A GROWTH-ENHANCING MONOCLONAL-ANTIBODY BY LIMITED TRYPTIC DIGESTION OF PORCINE GH
Authors: SHIEH HM BASS RT WANG BS CORBETT MJ BUCKWALTER BL
Citation: Hm. Shieh et al., EPITOPE MAPPING AND ANALYSIS OF A GROWTH-ENHANCING MONOCLONAL-ANTIBODY BY LIMITED TRYPTIC DIGESTION OF PORCINE GH, Journal of Endocrinology, 145(1), 1995, pp. 169-174
CHARACTERIZATION OF HIGH-PERFORMANCE INVERTED DELTA-MODULATION-DOPED (IDMD) GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE FETS/
Authors: HSU WC WU CL TSAI MS CHANG CY LIU WC SHIEH HM
Citation: Wc. Hsu et al., CHARACTERIZATION OF HIGH-PERFORMANCE INVERTED DELTA-MODULATION-DOPED (IDMD) GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE FETS/, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 804-809
VERY STRONG NEGATIVE DIFFERENTIAL RESISTANCE REAL-SPACE TRANSFER TRANSISTOR USING A MULTIPLE DELTA-DOPING GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE/
Authors: WU CL HSU WC TSAI MS SHIEH HM
Citation: Cl. Wu et al., VERY STRONG NEGATIVE DIFFERENTIAL RESISTANCE REAL-SPACE TRANSFER TRANSISTOR USING A MULTIPLE DELTA-DOPING GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE/, Applied physics letters, 66(6), 1995, pp. 739-741
ENHANCED 2-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS AND MOBILITIES IN MULTIPLE DELTA-DOPED GAAS IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/
Authors: SHIEH HM WU CL HSU WC WU YH KAO MJ
Citation: Hm. Shieh et al., ENHANCED 2-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS AND MOBILITIES IN MULTIPLE DELTA-DOPED GAAS IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/, JPN J A P 1, 33(4A), 1994, pp. 1778-1780
A 4-TERMINAL GAAS MULTIPLE-FUNCTION TRANSISTOR WITH A BURIED SILICON-DOPING QUANTUM-WELL
Authors: WU CL HSU WC TSAI MS SHIEH HM
Citation: Cl. Wu et al., A 4-TERMINAL GAAS MULTIPLE-FUNCTION TRANSISTOR WITH A BURIED SILICON-DOPING QUANTUM-WELL, JPN J A P 2, 33(10A), 1994, pp. 120001393-120001395
INFLUENCES OF DELTA-DOPING TIME AND SPACER THICKNESS ON THE MOBILITY AND 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN DELTA-DOPED GAAS INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/
Authors: SHIEH HM HSU WC KAO MJ WU CL
Citation: Hm. Shieh et al., INFLUENCES OF DELTA-DOPING TIME AND SPACER THICKNESS ON THE MOBILITY AND 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN DELTA-DOPED GAAS INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 154-157
AN IMPROVED INVERTED DELTA-DOPED GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE GROWN BY MOCVD
Authors: WU CL HSU WC SHIEH HM TSAI MS
Citation: Cl. Wu et al., AN IMPROVED INVERTED DELTA-DOPED GAAS INGAAS PSEUDOMORPHIC HETEROSTRUCTURE GROWN BY MOCVD, IEEE electron device letters, 15(9), 1994, pp. 330-332
SECONDARY-ION MASS-SPECTROMETRY ANALYSIS IN PSEUDOMORPHIC GAAS INGAAS/GAAS HETEROSTRUCTURES UTILIZING A DELTA-DOPING SUPERLATTICE/
Authors: WU CL HSU WC SHIEH HM
Citation: Cl. Wu et al., SECONDARY-ION MASS-SPECTROMETRY ANALYSIS IN PSEUDOMORPHIC GAAS INGAAS/GAAS HETEROSTRUCTURES UTILIZING A DELTA-DOPING SUPERLATTICE/, Journal of applied physics, 75(1), 1994, pp. 608-610
A HIGH-PERFORMANCE SYMMETRICAL DOUBLE DELTA-DOPED GAAS INGAAS/GAAS PSEUDOMORPHIC HFETS GROWN BY MOCVD/
Authors: HSU WC SHIEH HM WU CL WU TS
Citation: Wc. Hsu et al., A HIGH-PERFORMANCE SYMMETRICAL DOUBLE DELTA-DOPED GAAS INGAAS/GAAS PSEUDOMORPHIC HFETS GROWN BY MOCVD/, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 456-457
HIGH-PERFORMANCE 3-TERMINAL DELTA-DOPED GAAS NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR BASED ON REAL-SPACE TRANSFER
Authors: WU CL HSU WC TSAI MS SHIEH HM
Citation: Cl. Wu et al., HIGH-PERFORMANCE 3-TERMINAL DELTA-DOPED GAAS NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR BASED ON REAL-SPACE TRANSFER, Electronics Letters, 30(18), 1994, pp. 1537-1539
MOBILITY ENHANCEMENT IN DOUBLE DELTA-DOPED GAAS INXGA1-XAS GAAS PSEUDOMORPHIC STRUCTURES BY GRADING THE HETEROINTERFACES
Authors: WU CL HSU WC SHIEH HM LIU WC
Citation: Cl. Wu et al., MOBILITY ENHANCEMENT IN DOUBLE DELTA-DOPED GAAS INXGA1-XAS GAAS PSEUDOMORPHIC STRUCTURES BY GRADING THE HETEROINTERFACES, Applied physics letters, 64(22), 1994, pp. 3027-3029
IMPROVED SELECTIVELY DELTA-DOPED GAAS INGAAS DOUBLE-QUANTUM-WELL PSEUDOMORPHIC HFETS UTILIZING A BURIED P-LAYER ON THE BUFFER/
Authors: KAO MJ HSU WC SHIEH HM
Citation: Mj. Kao et al., IMPROVED SELECTIVELY DELTA-DOPED GAAS INGAAS DOUBLE-QUANTUM-WELL PSEUDOMORPHIC HFETS UTILIZING A BURIED P-LAYER ON THE BUFFER/, JPN J A P 2, 32(10B), 1993, pp. 120001503-120001505
A HIGH-PERFORMANCE DELTA-DOPED GAAS IN(X)GA(1-X)AS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR UTILIZING A GRADED IN(X)GA(1-X)AS CHANNEL/
Authors: SHIEH HM HSU WC HSU RT WU CL WU TS
Citation: Hm. Shieh et al., A HIGH-PERFORMANCE DELTA-DOPED GAAS IN(X)GA(1-X)AS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR UTILIZING A GRADED IN(X)GA(1-X)AS CHANNEL/, IEEE electron device letters, 14(12), 1993, pp. 581-583
IMPROVED GAAS IN0.25GA0.75AS GAAS PSEUDOMORPHIC HETEROSTRUCTURE BY GROWING DOUBLE DELTA-DOPING GAAS-LAYERS ON BOTH SIDES OF THE CHANNEL
Authors: SHIEH HM HSU WC WU CL
Citation: Hm. Shieh et al., IMPROVED GAAS IN0.25GA0.75AS GAAS PSEUDOMORPHIC HETEROSTRUCTURE BY GROWING DOUBLE DELTA-DOPING GAAS-LAYERS ON BOTH SIDES OF THE CHANNEL, Solid-state electronics, 36(9), 1993, pp. 1235-1237
Risultati: 1-25 | 26-28