Citation: Ecc. Yeh et al., STUDY ON THE ELECTRICAL-CONDUCTION OF P(+) POROUS SILICON, Physica status solidi. a, Applied research, 165(1), 1998, pp. 63-67
Citation: Th. Shieh et al., OBSERVATION OF X-BAND ELECTRON QUANTUM INTERFERENCE AND TRANSPORT THROUGH VIRTUAL STATES IN ALXGA1-XAS ALAS HETEROSTRUCTURES/, Journal of applied physics, 74(6), 1993, pp. 4229-4232
Citation: Th. Shieh et Sc. Lee, RESONANT-TUNNELING OF X-BAND ELECTRONS FROM ALAS THROUGH GAAS ALAS/GAAS DOUBLE-BARRIER STRUCTURE/, Applied physics letters, 63(9), 1993, pp. 1219-1221
Citation: Th. Shieh et Sc. Lee, OBSERVATION OF DEEP DONOR CENTER RELATED TUNNELING PEAK IN THE ALXGA1-XAS ALAS/ALXGA1-XAS/ALAS/ALXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.50) RESONANT-TUNNELING DIODES/, Applied physics letters, 63(5), 1993, pp. 654-656
Citation: Th. Shieh et Sc. Lee, TRANSPORT MECHANISM OF X-BAND ELECTRONS IN ALAS ELECTRODE THROUGH GAAS ALAS/GAAS STRUCTURE BY VARYING GAAS WELL THICKNESS/, Applied physics letters, 63(24), 1993, pp. 3350-3352