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THE FORMATION OF BORON-DOPED POLYCRYSTALLINE SI WITH EXTREMELY LOW RESISTIVITIES AT LOW-TEMPERATURES, (VOL 141, PG 1334, 1994)
Authors: SHIOZAWA J KASAI Y MIKATA Y YAMABE K
Citation: J. Shiozawa et al., THE FORMATION OF BORON-DOPED POLYCRYSTALLINE SI WITH EXTREMELY LOW RESISTIVITIES AT LOW-TEMPERATURES, (VOL 141, PG 1334, 1994), Journal of the Electrochemical Society, 141(8), 1994, pp. 2265-2265
THE FORMATION OF BORON-DOPED POLYCRYSTALLINE SI WITH EXTREMELY LOW RESISTIVITIES AT LOW-TEMPERATURES
Authors: SHIOZAWA J KASAI Y MIKATA Y YAMABE K
Citation: J. Shiozawa et al., THE FORMATION OF BORON-DOPED POLYCRYSTALLINE SI WITH EXTREMELY LOW RESISTIVITIES AT LOW-TEMPERATURES, Journal of the Electrochemical Society, 141(5), 1994, pp. 1334-1338
SMOOTHING OF THE SI SURFACE USING CF4 O2 DOWN-FLOW ETCHING/
Authors: NISHINO H HAYASAKA N HORIOKA K SHIOZAWA J NADAHARA S SHOODA N AKAMA Y SAKAI A OKANO H
Citation: H. Nishino et al., SMOOTHING OF THE SI SURFACE USING CF4 O2 DOWN-FLOW ETCHING/, Journal of applied physics, 74(2), 1993, pp. 1349-1353
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