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RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS
Authors: BYKOVSKII VA UTENKO VI SHOKH VF KORSHUNOV FP SOLODOVNIKOV ES
Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS, Semiconductors, 30(7), 1996, pp. 685-689
INTRODUCTION OF ACCEPTOR IMPURITIES BY PHOTONUCLEAR DOPING OF GALLIUM-ARSENIDE
Authors: AKULOVICH NI BYKOVSKII VA KARPOVICH LM UTENKO VI SHOKH VF PETRENKO VV
Citation: Ni. Akulovich et al., INTRODUCTION OF ACCEPTOR IMPURITIES BY PHOTONUCLEAR DOPING OF GALLIUM-ARSENIDE, Semiconductors, 30(2), 1996, pp. 158-161
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