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Results: 1
REDUCTION OF PARASITIC BIPOLAR-TRANSISTOR ACTION AND PUNCHTHROUGH SUSCEPTIBILITY IN MOSFETS USING SI SI1-XGEX SOURCES AND DRAINS/
Authors:
SIDEK RM EVANS AGR KUBIAK RA
Citation:
Rm. Sidek et al., REDUCTION OF PARASITIC BIPOLAR-TRANSISTOR ACTION AND PUNCHTHROUGH SUSCEPTIBILITY IN MOSFETS USING SI SI1-XGEX SOURCES AND DRAINS/, Electronics Letters, 32(3), 1996, pp. 269-270
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