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Results: 1-25 | 26-29 |
Results: 26-29/29
HETEROEPITAXIAL SI SI1-XGEX SI STRUCTURES PRODUCED USING PULSED UV-LASER PROCESSING
Authors: KRAMER KJ TALWAR S SIGMON TW WEINER KH
Citation: Kj. Kramer et al., HETEROEPITAXIAL SI SI1-XGEX SI STRUCTURES PRODUCED USING PULSED UV-LASER PROCESSING, Applied physics letters, 65(13), 1994, pp. 1709-1711
BORON AND ALUMINUM IMPLANTATION IN ALPHA-SIC
Authors: AHMED S BARBERO CJ SIGMON TW ERICKSON JW
Citation: S. Ahmed et al., BORON AND ALUMINUM IMPLANTATION IN ALPHA-SIC, Applied physics letters, 65(1), 1994, pp. 67-69
FABRICATION AND CHARACTERIZATION OF SELECTIVELY GROWN SI1-XGEX SI P+/N HETEROJUNCTIONS USING PULSED-LASER INDUCED EPITAXY AND GAS IMMERSIONLASER DOPING/
Authors: KRAMER KJ TALWAR S ISHIDA E WEINER KH SIGMON TW
Citation: Kj. Kramer et al., FABRICATION AND CHARACTERIZATION OF SELECTIVELY GROWN SI1-XGEX SI P+/N HETEROJUNCTIONS USING PULSED-LASER INDUCED EPITAXY AND GAS IMMERSIONLASER DOPING/, Applied surface science, 69(1-4), 1993, pp. 121-126
AN EXCIMER-LASER-BASED NANOSECOND THERMAL-DIFFUSION TECHNIQUE FOR ULTRA-SHALLOW PN JUNCTION FABRICATION
Authors: WEINER KH CAREY PG MCCARTHY AM SIGMON TW
Citation: Kh. Weiner et al., AN EXCIMER-LASER-BASED NANOSECOND THERMAL-DIFFUSION TECHNIQUE FOR ULTRA-SHALLOW PN JUNCTION FABRICATION, Microelectronic engineering, 20(1-2), 1993, pp. 107-130
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