Authors: MUTAMBA K SIGURDARDOTTIR A VOGT A HARTNAGEL HL LI EH

Citation: K. Mutamba et al., A COMPARATIVE-STUDY OF UNIAXIAL PRESSURE EFFECTS IN INTRABAND ALGAAS GAAS AND INTERBAND INAS/ALSB/GASB RESONANT-TUNNELING DIODES/, Applied physics letters, 72(13), 1998, pp. 1629-1631

Authors: DASGUPTA A ARSLAN D SIGURDARDOTTIR A HARTNAGEL HL

Citation: A. Dasgupta et al., A NOVEL SELF-CONSISTENT SIMULATOR FOR CURRENT-DENSITY-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR FIELD EMITTERS, Applied physics letters, 72(10), 1998, pp. 1220-1222

Authors: VOGT A BRANDT M SIGURDARDOTTIR A SCHUSSLER M PENA D SIMON A HARTNAGEL HL RODEWALD M ROESNER M FUESS H GOSWAMI SNN LAL K

Citation: A. Vogt et al., CHARACTERIZATION OF DEGRADATION MECHANISMS IN RESONANT-TUNNELING DIODES, Microelectronics and reliability, 37(10-11), 1997, pp. 1691-1694

Authors: SIGURDARDOTTIR A KROZER V HARTNAGEL HL

Citation: A. Sigurdardottir et al., MODELING AND DESIGN OF INAS ALSB-RESONANT TUNNELING DIODES/, Applied physics letters, 67(22), 1995, pp. 3313-3315