Authors:
RAO EVK
GOTTESMAN Y
ALLOVON M
VERGNOL E
SIGOGNE D
TALNEAU A
SIK H
SLEMPKES S
THEYS B
CHEVALLIER J
Citation: Evk. Rao et al., A SIGNIFICANT REDUCTION OF PROPAGATION LOSSES IN INGAASP-INP BURIED-STRIPE WAVE-GUIDES BY HYDROGENATION, IEEE photonics technology letters, 10(3), 1998, pp. 370-372
Citation: A. Rigny et al., MULTIGRATING METHOD FOR FLATTENED SPECTRAL RESPONSE WAVELENGTH MULTI DEMULTIPLEXER/, Electronics Letters, 33(20), 1997, pp. 1701-1702
Authors:
SIK H
FEURPRIER Y
CARDINAUD C
TURBAN G
SCAVENNEC A
Citation: H. Sik et al., REDUCTION OF RECOMBINATION VELOCITY ON GAAS SURFACE BY GA-S AND AS-S BOND-RELATED SURFACE-STATES FROM (NH4)(2)S-X TREATMENT, Journal of the Electrochemical Society, 144(6), 1997, pp. 2106-2115
Authors:
SIK H
DRIAD R
LEGAY P
JUHEL M
HARMAND JC
LAUNAY P
ALEXANDRE F
Citation: H. Sik et al., (NH4)(2)S-X PREEPITAXIAL TREATMENT FOR GAAS CHEMICAL BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 147-151
Authors:
RIGNY A
RAMUS C
BRUNO A
RAFLE Y
SIK H
POST G
CARRE M
CARENCO A
Citation: A. Rigny et al., TAPER-ASSISTED POLARIZATION COMPENSATION IN EFFICIENTLY FIBER-COUPLEDINP DEMULTIPLEXER, Electronics Letters, 32(20), 1996, pp. 1885-1886
Citation: H. Sik et al., (NH4)2SX PASSIVATION TREATMENT AND UVCVD STABILIZATION FOR GAINP GAASHETEROJUNCTION BIPOLAR-TRANSISTORS/, Microelectronic engineering, 25(2-4), 1994, pp. 293-298
Authors:
DANGLA J
BENCHIMOL JL
ALEXANDRE F
SIK H
DUBONCHEVALLIER C
Citation: J. Dangla et al., STABILITY OF HIGHLY BE-DOPED GAAS GAINP HBTS GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(10), 1993, pp. 903-905