(NH4)2SX PASSIVATION TREATMENT AND UVCVD STABILIZATION FOR GAINP GAASHETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
SIK H RIET M DUBONCHEVALLIER C SERMAGE B
Citation
H. Sik et al., (NH4)2SX PASSIVATION TREATMENT AND UVCVD STABILIZATION FOR GAINP GAASHETEROJUNCTION BIPOLAR-TRANSISTORS/, Microelectronic engineering, 25(2-4), 1994, pp. 293-298
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
25
Issue
2-4
Year of publication
1994
Pages
293 - 298
Database
ISI
SICI code
0167-9317(1994)25:2-4<293:(PTAUS>2.0.ZU;2-N
Abstract
It has been demonstrated that sulfur treatment using (NH4)2Sx solution provides an effective passivation of the GaAs surface. The effectiven ess of the treatment is dependant on polysulfides S(n)2- concentration s. These treatments being unfortunately not stable with the time, a st abilisation process using a dielectric film overcoathas been investiga ted; a silicon nitride film deposited by the UVCVD technique has been chosen.