Citation: S. Sikorski, THE TRANSPORT OF EXCESS CURRENT CARRIERS IN AN INHOMOGENEOUS SEMICONDUCTOR WITH POSITION-DEPENDENT BAND-GAP, Semiconductor science and technology, 13(1), 1998, pp. 18-26
Citation: A. Liptuga et al., INVESTIGATION OF SMALL-SIGNAL OPERATION OF THE INFRARED GERMANIUM INJECTION MODULATOR, Infrared physics & technology, 38(5), 1997, pp. 273-279
Citation: J. Pultorak et al., INFLUENCE OF THE CURRENT-DENSITY AND INTERNAL ELECTRIC-FIELD ON THE EXCLUSION OF EXCESS CARRIERS IN LONG SEMICONDUCTOR SAMPLES, Semiconductor science and technology, 10(4), 1995, pp. 395-404