AAAAAA
Results:
1-7
|
Results: 7
Authors:
BEAUDOIN F
MEUNIER M
SIMARDNORMANDIN M
LANDHEER D
Citation: F. Beaudoin et al., EXCIMER-LASER CLEANING OF SILICON-WAFER BACKSIDE METALLIC PARTICLES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1976-1979
Authors:
COULTHARD I
SHAM TK
SIMARDNORMANDIN M
SARAN M
GARRETT JD
Citation: I. Coulthard et al., XAFS STUDIES OF TISI2 AND COSI2 THIN-FILMS AT THE TI, CO AND SI K-EDGE, Journal de physique. IV, 7(C2), 1997, pp. 1135-1136
Authors:
CYCA BR
ROBINS KG
TARR NG
XU DX
NOEL JP
LANDHEER D
SIMARDNORMANDIN M
Citation: Br. Cyca et al., HOLE CONFINEMENT AND MOBILITY IN HETEROSTRUCTURE SI GE/SI P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(12), 1997, pp. 8079-8083
Authors:
LIU Q
RUDA HE
CHEN GM
SIMARDNORMANDIN M
Citation: Q. Liu et al., A GENERALIZED-APPROACH TO SURFACE PHOTOVOLTAGE, Journal of applied physics, 79(10), 1996, pp. 7790-7799
Authors:
BARDWELL JA
EVANS RJ
DRAPER N
ROLFE SJ
NAEM A
SIMARDNORMANDIN M
Citation: Ja. Bardwell et al., DOPANT DEPTH PROFILING BY ANODIC SECTIONING USING 0.1 M HCL ELECTROLYTE, Journal of the Electrochemical Society, 143(11), 1996, pp. 256-258
Authors:
SHAFAI C
THOMSON DJ
SIMARDNORMANDIN M
Citation: C. Shafai et al., 2-DIMENSIONAL DELINEATION OF SEMICONDUCTOR DOPING BY SCANNING RESISTANCE MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 378-382
Authors:
SHAFAI C
THOMSON DJ
SIMARDNORMANDIN M
MATTIUSSI G
SCANLON PJ
Citation: C. Shafai et al., DELINEATION OF SEMICONDUCTOR DOPING BY SCANNING RESISTANCE MICROSCOPY, Applied physics letters, 64(3), 1994, pp. 342-344
Risultati:
1-7
|