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Results:
1-16
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Results: 16
Authors:
SKROMME BJ
Citation: Bj. Skromme, OPTICAL AND MAGNETOOPTICAL CHARACTERIZATION OF HETEROEPITAXIAL GALLIUM NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 117-125
Authors:
SKROMME BJ
ZHAO H
WANG D
KONG HS
LEONARD MT
BULMAN GE
MOLNAR RJ
Citation: Bj. Skromme et al., STRAIN DETERMINATION IN HETEROEPITAXIAL GAN, Applied physics letters, 71(6), 1997, pp. 829-831
Authors:
HUTCHINS JW
SKROMME BJ
CHEN YP
SIVANANTHAN S
POSTHILL JB
Citation: Jw. Hutchins et al., OPTICAL INVESTIGATION OF STRAIN AND DEFECTS IN (100)CDTE GE/SI AND (100)ZNTE/GE/SI GROWN BY MOLECULAR-BEAM-EPITAXY/, Applied physics letters, 71(3), 1997, pp. 350-352
Authors:
MORTON R
DENG F
LAU SS
XIN S
FURDYNA JK
HUTCHINS JW
SKROMME BJ
MAYER JW
Citation: R. Morton et al., ION-BEAM MIXING IN ZNSE CDZNSE STRAINED-LAYER STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 704-708
Authors:
HUTCHINS JW
PARAMESHWARAN B
SKROMME BJ
SMITH DJ
SIVANANTHAN S
Citation: Jw. Hutchins et al., OPTICAL CHARACTERIZATION OF ZNMNSSE QUATERNARY ALLOYS FOR VISIBLE-LIGHT EMITTING DEVICES, Journal of crystal growth, 159(1-4), 1996, pp. 50-53
Authors:
TSEN SCY
SMITH DJ
HUTCHINS JW
SKROMME BJ
CHEN YP
SIVANANTHAN S
Citation: Scy. Tsen et al., HETEROEPITAXIAL CDTE(111) GROWN BY MBE ON NOMINALLY FLAT AND MISORIENTED SI(001) SUBSTRATES - CHARACTERIZATION BY ELECTRON-MICROSCOPY AND OPTICAL METHODS, Journal of crystal growth, 159(1-4), 1996, pp. 58-63
Authors:
SIVANANTHAN S
WANG L
SPORKEN R
CHEN J
SKROMME BJ
SMITH DJ
Citation: S. Sivananthan et al., MNS ZNSE ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 159(1-4), 1996, pp. 94-98
Authors:
SKROMME BJ
Citation: Bj. Skromme, OPTICAL CHARACTERIZATION OF WIDE-GAP II-VI MATERIALS FOR VISIBLE-LIGHT EMITTING DEVICES, Journal of the Korean Physical Society, 28, 1995, pp. 43-51
Authors:
HAUKSSON IS
WANG SY
SIMPSON J
PRIOR KA
CAVENETT BC
LIU W
SKROMME BJ
Citation: Is. Hauksson et al., DEEP-CENTER PHOTOLUMINESCENCE IN NITROGEN-DOPED ZNSE, Physical review. B, Condensed matter, 52(24), 1995, pp. 17184-17190
Authors:
SKROMME BJ
Citation: Bj. Skromme, LUMINESCENCE AS A DIAGNOSTIC OF WIDE-GAP II-VI COMPOUND SEMICONDUCTOR-MATERIALS, Annual review of materials science, 25, 1995, pp. 601-646
Authors:
CHEN J
ZHANG Y
SKROMME BJ
AKIMOTO K
PACHUTA SJ
Citation: J. Chen et al., PROPERTIES OF THE SHALLOW O-RELATED ACCEPTOR LEVEL IN ZNSE, Journal of applied physics, 78(8), 1995, pp. 5109-5119
Authors:
SKROMME BJ
ZHANG Y
SMITH DJ
SIVANANTHAN S
Citation: Bj. Skromme et al., GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SINGLE-CRYSTAL ZINC BLENDE MNS, Applied physics letters, 67(18), 1995, pp. 2690-2692
Authors:
HAUKSSON IS
WANG SY
SIMPSON J
PRIOR KA
CAVENETT BC
LIU W
SKROMME BJ
Citation: Is. Hauksson et al., DEEP CENTER PHOTOLUMINESCENCE IN NITROGEN-DOPED ZNSE, Physica scripta. T, 54, 1994, pp. 20-23
Authors:
ZHANG Y
LIU W
SKROMME BJ
CHENG H
SHIBLI SM
TAMARGO MC
Citation: Y. Zhang et al., SYSTEMATIC INVESTIGATION OF SHALLOW ACCEPTOR LEVELS IN ZNSE, Journal of crystal growth, 138(1-4), 1994, pp. 310-317
Authors:
SKROMME BJ
LIU W
JENSEN KF
GIAPIS KP
Citation: Bj. Skromme et al., EFFECTS OF C INCORPORATION ON THE LUMINESCENCE PROPERTIES OF ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 138(1-4), 1994, pp. 338-345
Authors:
ZHANG Y
SKROMME BJ
SHIBLI SM
TAMARGO MC
Citation: Y. Zhang et al., PROPERTIES OF THE AS-RELATED SHALLOW ACCEPTOR LEVEL IN HETEROEPITAXIAL ZNSE GROWN BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 48(15), 1993, pp. 10885-10892
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1-16
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