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Results: 1-6 |
Results: 6

Authors: JONES KS ROBINSON HG LISTEBARGER J CHEN J LIU J HERNER B PARK H LAW ME SIELOFF D SLINKMAN JA
Citation: Ks. Jones et al., STUDIES OF POINT-DEFECT DISLOCATION LOOP INTERACTION PROCESSES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 196-201

Authors: PARK H JONES KS SLINKMAN JA LAW ME
Citation: H. Park et al., EFFECTS OF HYDROSTATIC-PRESSURE ON DOPANT DIFFUSION IN SILICON, Journal of applied physics, 78(6), 1995, pp. 3664-3670

Authors: LISTEBARGER JK ROBINSON HG JONES KS LAW ME SIELOFF DD SLINKMAN JA SEDGWICK TO
Citation: Jk. Listebarger et al., STUDY OF END-OF-RANGE LOOP INTERACTIONS WITH B-DOPED DIFFUSION LAYER(IMPLANT DAMAGE USING A BORON), Journal of applied physics, 78(4), 1995, pp. 2298-2302

Authors: VOLDMAN SH GROSS VP HARGROVE MJ NEVER JM SLINKMAN JA OBOYLE MP SCOTT TS DELECKI JJ
Citation: Sh. Voldman et al., SHALLOW TRENCH ISOLATION DOUBLE-DIODE ELECTROSTATIC DISCHARGE CIRCUITAND INTERACTION WITH DRAM OUTPUT CIRCUITRY, Journal of electrostatics, 31(2-3), 1993, pp. 237-262

Authors: HEMBREE CE MASON BA KWIATKOWSKI JT FURNEAUX J SLINKMAN JA
Citation: Ce. Hembree et al., CALCULATED SPIN EFFECTS IN WIDE PARABOLIC QUANTUM-WELLS, Physical review. B, Condensed matter, 48(12), 1993, pp. 9162-9165

Authors: LISTEBARGER JK JONES KS SLINKMAN JA
Citation: Jk. Listebarger et al., USE OF TYPE-II (END OF RANGE) DAMAGE AS DETECTORS FOR QUANTIFYING INTERSTITIAL FLUXES IN ION-IMPLANTED SILICON, Journal of applied physics, 73(10), 1993, pp. 4815-4819
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